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From Millimeters to Microns: A Hybrid Strategy for Reconfigurable Liquid-Crystal Patterning. [PDF]
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Scaling the bulk-driven MOSFET
2009 International Conference on Microelectronics - ICM, 2009This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g mb is observed across process technology and it is shown that the g mb /g m ratio falls from 0.38 to 0.12 between IBM's 0.25 μm and 65 nm bulk CMOS processes via simulation.
Christopher Urban +2 more
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2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
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A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
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Proceedings of 21st International Conference Radioelektronika 2011, 2011
Bulk-driven technique has been verified to be a promising candidate in the area of low-voltage low-power techniques. In this paper, class AB current conveyor utilizing bulk-driven technique has been proposed. The proposed circuit was implemented based on CMOS technology to put a step forward in the field of low-voltage low-power applications; the non ...
Fabian Khateb, Nabhan Khatib
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Bulk-driven technique has been verified to be a promising candidate in the area of low-voltage low-power techniques. In this paper, class AB current conveyor utilizing bulk-driven technique has been proposed. The proposed circuit was implemented based on CMOS technology to put a step forward in the field of low-voltage low-power applications; the non ...
Fabian Khateb, Nabhan Khatib
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0.8V bulk-driven variable gain amplifier
2010 17th IEEE International Conference on Electronics, Circuits and Systems, 2010A low-voltage variable gain amplifier based on PMOS bulk-driven input stage is presented in this paper. The gain of the proposed amplifier has a linear in-dB gain dependency since it utilizes the conventional pseudo exponential approximation function (1+x)/(1−x). The master-slave technique is used in order to control the voltage gain.
George Raikos, Spyridon Vlassis
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0.8 V bulk-driven operational amplifier
Analog Integrated Circuits and Signal Processing, 2009A low-voltage bulk-driven CMOS operational amplifier is proposed in this paper. The inherent small transconductance of the bulk-driven devices is enlarged using a positive feedback, improving also the noise performance. The amplifier is designed using standard 0.18 μm n-well CMOS process. Although the amplifier is optimized for 0.8 V supply voltage, it
George Raikos, Spyridon Vlassis
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0.5‐V bulk‐driven differential amplifier
International Journal of Circuit Theory and Applications, 2012SUMMARYA new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage.
George Raikos, Spyridon Vlassis
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Bulk-Driven Current Differencing Transconductance Amplifier
Circuits, Systems, and Signal Processing, 2011Low-voltage (LV) low-power (LP) integrated circuit design is becoming a leading trend in VLSI technology, particularly in special portable applications. In this paper, the principle of a bulk-driven MOS transistor is employed in the design of a novel LV LP current differencing transconductance amplifier (CDTA).
Fabian Khateb, Dalibor Biolek
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