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Nanoporosity boosts irradiation-induced dynamics in silica.
Mater AdvDallari F +4 more
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AEU - International Journal of Electronics and Communications, 2019
Abstract This brief presents a comparative performance study of two recently presented techniques, the multiple-input bulk-driven (MI-BD) and the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistors (MOST). These techniques offer simplified CMOS structures of specific active elements and ensure near rail-to-rail operation ...
Rajeev Kumar Ranjan +2 more
exaly +2 more sources
Abstract This brief presents a comparative performance study of two recently presented techniques, the multiple-input bulk-driven (MI-BD) and the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistors (MOST). These techniques offer simplified CMOS structures of specific active elements and ensure near rail-to-rail operation ...
Rajeev Kumar Ranjan +2 more
exaly +2 more sources
A Low Dropout Voltage Regulated Bulk-driven CMOS Current Mirror [PDF]
Procedia Computer Science, 2016 Novel bulk-driven current mirror (CM) and bulk-driven cascode CM are presented in this paper. Bulk-driven technique is employed to overcome a threshold voltage limitation. Proposed circuits operate at 1V power supply.
Apinunt Thanachayanont +1 more
exaly +2 more sources
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
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A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
openaire +1 more source
Scaling the bulk-driven MOSFET
2009 International Conference on Microelectronics - ICM, 2009This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g mb is observed across process technology and it is shown that the g mb /g m ratio falls from 0.38 to 0.12 between IBM's 0.25 μm and 65 nm bulk CMOS processes via simulation.
Christopher Urban +2 more
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Transconductance enhancement in bulk-driven input stages
2008 15th IEEE International Conference on Electronics, Circuits and Systems, 2008This paper presents two different circuit techniques which rely on partial positive feedback to enhance the effective transconductance of a CMOS bulk-driven input stage, thus leading to improved values for the DC gain and the gain-bandwidth product. The first approach modifies the conductance of the active load, while the second solution acts directly ...
Juan Manuel Carrillo +2 more
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0.5‐V bulk‐driven differential amplifier
International Journal of Circuit Theory and Applications, 2012SUMMARYA new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage.
George Raikos, Spyridon Vlassis
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