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Low-voltage bulk-driven rectifier for biomedical applications
Microelectronics Journal, 2013This paper introduces the novel design of a low-voltage low-power voltage rectifier based on bulk-driven (BD) winner-take-all (WTA) circuit. The proposed circuit is able to work as a half- or full-wave rectifier and it is specifically designed for battery-powered implantable and wearable medical devices.
Fabian Khateb, Spyridon Vlassis
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A 0.5-V Bulk-Driven Active Voltage Attenuator
Circuits, Systems, and Signal Processing, 2019In this work, a novel differential active voltage attenuator that is capable of operating under low supply voltage and power consumption is presented. The proposed attenuator is based on bulk-driven MOS devices. Thanks to the use of the fully balanced differential structure, the attenuator demonstrates improved common-mode rejection capability.
Spyridon Vlassis +3 more
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A Bulk-Driven Lowpass Filter for EEG Signal
2020 6th International Conference on Engineering, Applied Sciences and Technology (ICEAST), 2020A typical Electroencephalography (EEG) acquisition system must include a lowpass filter (LPF) unit. According to the clinical applications, EEG signal have a conventional frequency range of 0.1-Hz to 70-Hz. The cutoff frequency for an LPF in EEG acquisition system should be in the same range.
Kanin Tungwachira, Surachoke Thanapithak
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A novel OTA with dual bulk-driven input stage
2009 IEEE International Symposium on Circuits and Systems, 2009A novel operational transconductance amplifier with dual bulk-driven input stage is introduced, suitable for portable biomedical monitoring system and battery-operated devices. The scheme not only avoids the leakage current of conventional bulk-driven circuit but also reduces power consumption.
Sheng-Wen Pan +3 more
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0.8 V bulk-driven operational amplifier
Analog Integrated Circuits and Signal Processing, 2009A low-voltage bulk-driven CMOS operational amplifier is proposed in this paper. The inherent small transconductance of the bulk-driven devices is enlarged using a positive feedback, improving also the noise performance. The amplifier is designed using standard 0.18 μm n-well CMOS process. Although the amplifier is optimized for 0.8 V supply voltage, it
George Raikos, Spyridon Vlassis
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Proceedings of 21st International Conference Radioelektronika 2011, 2011
Bulk-driven technique has been verified to be a promising candidate in the area of low-voltage low-power techniques. In this paper, class AB current conveyor utilizing bulk-driven technique has been proposed. The proposed circuit was implemented based on CMOS technology to put a step forward in the field of low-voltage low-power applications; the non ...
Fabian Khateb, Nabhan Khatib
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Bulk-driven technique has been verified to be a promising candidate in the area of low-voltage low-power techniques. In this paper, class AB current conveyor utilizing bulk-driven technique has been proposed. The proposed circuit was implemented based on CMOS technology to put a step forward in the field of low-voltage low-power applications; the non ...
Fabian Khateb, Nabhan Khatib
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An efficient approach to enhance bulk-driven amplifiers
Analog Integrated Circuits and Signal Processing, 2017In this paper, a single-stage class AB bulk-driven amplifier operating in weak inversion region is proposed. The presented amplifier benefits from an improved high input swing structure using quasi-floating-gate technique. The composite transistors and recycling configuration used at the input stage enable the input differential pair to operate under ...
Meysam Akbari +3 more
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A Compact 0.3-V Class AB Bulk-Driven OTA
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2020In this article, a new solution for an ultralow-voltage (ULV) ultralow-power (ULP) operational transconductance amplifier (OTA) is presented. Thanks to the combination of a low-voltage bulk-driven nontailed differential stage with the multipath Miller zero compensation technique, a simple class AB power-efficient ULV structure has been obtained, which ...
Tomasz Kulej, Fabian Khateb
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Designing bulk-driven MOSFETs in scaled technologies
2009 International Semiconductor Device Research Symposium, 2009With the advent of system-on-a-chip integration, analog components are being forced to co-exist with their digital counterparts in scaled processes where the supply voltage, V DD , is expected to fall to 0.7 V by 2012 [1]. As a result of this integration, traditional analog topologies suffer from voltage headroom constraints since the threshold voltage,
C. Urban, J.E. Moon, P.R. Mukund
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Comparison of Gate-Driven and Bulk-Driven Current Mirror Topologies
2016 IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2016In this paper, different topologies of gate-driven and bulk-driven current mirrors designed in 90 nm CMOS technology are presented. Since the conventional MOS transistors can work as a bulk-driven device, there is no need for any modification of the existing MOSFET structure or technology process.
Daniel Arbet +2 more
exaly +3 more sources