Results 121 to 130 of about 527 (196)

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]

Adv Mater
Li B, Liu Y, Liu J, See JSY, Xing K, Qi DC, Renshaw Wang X.   +6 more
europepmc   +1 more source

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Advanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, Wei Huang, Fobao Huang   +9 more
wiley   +1 more source

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution. [PDF]

Nanomicro Lett
Lee JH, Kim JY, Lee HJ, Choi SJ, Lee YJ, Jang HW.   +5 more
europepmc   +1 more source

An Immediate‐Response Detection System for γ‐Hydroxybutyrate to Enhance Personal Safety in Social Environments

Advanced Science, EarlyView.
A graphene‐based electrical biosensor enables rapid and highly sensitive detection of GHB at 100 fm in both standard solutions and artificial urine, providing reliable point‐of‐need screening for drug‐facilitated sexual assault. The platform demonstrates strong selectivity, fast response, and a wide dynamic range, supporting accurate detection in ...
Jai Eun An, Jisung Kwak, Kyung Ho Kim, Chaeeun Kim, Sung Eun Seo, Nathaniel S. Hwang, Yong‐Sang Ryu, Hyun Seok Song, Oh Seok Kwon   +8 more
wiley   +1 more source

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

Advanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu, Shanshan Zhou, Meng Li, Aung Ko Ko Kyaw, Xiao‐Lei Shi, Qian Liu   +5 more
wiley   +1 more source

Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices. [PDF]

Micromachines (Basel)
Ren Y, Zhu M, Dai X, Li L, Liu M.
europepmc   +1 more source

Human‐Guided Bayesian Optimization Enables High‐Throughput Laser Annealing of Mesoporous SiOx Anodes for Lithium‐Ion Batteries

Advanced Science, EarlyView.
An empirical‐aided active learning framework is developed to optimize high‐throughput laser‐induced photothermal annealing of silicon suboxide anodes. By integrating probabilistic machine learning with empirical domain knowledge, this approach achieves optimal electrochemical performance using limited experiments.
Chaeyoung Park, Yeongje Lee, Sunho Jeong, Eungkyu Lee   +3 more
wiley   +1 more source

Fe-doped MoS₂ monolayers for CO, H₂S, and NO₂ detection: towards advanced environmental sensors. [PDF]

RSC Adv
Hoang NV, Trieu TQ.
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source