Results 71 to 80 of about 391 (98)

Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications. [PDF]

Nanomaterials (Basel)
Mansoori S, Chen E, Fischetti M.
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Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array. [PDF]

Nano Lett
Ma Y, Chen M, Aguirre F, Yan Y, Pazos S, Liu C, Wang H, Yang T, Wang B, Gong C, Liu K, Liu JZ, Lanza M, Xue F, Zhang X.   +14 more
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Two-dimensional layered metal oxides (2D LMOs) for next-generation electronic devices. [PDF]

Nanoscale Adv
Verma A, Rani A, Yadav BC.
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Improved Metal-Semiconductor Interface in Monolayer (1L)-MoS₂ via Thermally-Driven Ag Filaments as Atomic Scale Edge Contacts Triggered by Selective Annealing Process Using Long Wavelength (1064 nm) Pulsed Laser. [PDF]

ACS Appl Mater Interfaces
Wani SS, Kuo YR, Kimbulapitiya KMMDK, Cyu RH, Chen CT, Liu MJ, Nguyen HU, Rehman B, Liu XR, Chuang FC, Lin YF, Shen CH, Chiu PW, Chueh YL.   +13 more
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Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

Circuits, Systems, and Signal Processing, 2018
This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR).
Fabian Khateb, Tomasz Kulej, Montree Kumngern, Costas Psychalinos   +3 more
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Low-voltage CFOA with bulk-driven, quasi-floating-gate and bulk-driven-quasi-floating-gate MOS transistors

TENCON 2015 - 2015 IEEE Region 10 Conference, 2015
In this work, the low-voltage current feedback operational amplifier (CFOA) with bulk-driven, quasi-floating-gate (QFG) transistor and bulk-driven-quasi-floating-gate (QFG) transistor techniques to operate under low supply voltage is proposed. The proposed circuits were design based on the voltage follower and current follower while the output stages ...
Fabian Khateb, Tomasz Kulej, Harikrishna Veldandi, Winai Jaikla   +3 more
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Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor

2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2016
A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor
Thawatchai Thongleam, Apirak Suadet, Varakorn Kasemsuwan   +2 more
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1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors

2011 20th European Conference on Circuit Theory and Design (ECCTD), 2011
An OTA-C filter implementation suited to low-voltage operation is presented. An operational transconductance amplifier (OTA) based on a bulk-driven input stage with enhanced DC gain and bandwidth was designed and included in a 1.2-V tunable fully differential second-order OTA-C lowpass filter.
J. M. Carrillo, M. A. Dominguez, J. F. Duque-Carrillo, G. Torelli   +3 more
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A new linearization technique for a CMOS differential amplifier using bulk-driven weak inversion MOS transistors

Signals, Circuits and Systems, 2003. SCS 2003. International Symposium on, 2003
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
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