Results 91 to 100 of about 2,548,373 (230)
A Multiproject Chip Approach to the Teaching of Analog MOS LSI and VLSI [PDF]
, 1981 Multiproject chip implementation has been used in teaching analog MOS circuit design. After having worked with computer simulation and layout aids in homework problems, students designed novel circuits including several high performance op amps, an A/D ...
Antoniadis, Dimitri A. +1 more
core
Advanced Materials, EarlyView.Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
“Smelltronics”—From Gas to Smell Sensing
Advanced Materials, EarlyView.The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono +7 more
wiley +1 more source
Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells
Advanced Materials, EarlyView.Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang +14 more
wiley +1 more source
Advanced Materials, EarlyView.A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung +9 more
wiley +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity
Advanced Materials, EarlyView.Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen +7 more
wiley +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
Advanced Materials, EarlyView.A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source