Results 71 to 80 of about 2,548,373 (230)

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Electrical Characterization of Power Silicon Carbide MOSFETs with Linear and Hexagonal Base Cell Designs

Известия высших учебных заведений России: Радиоэлектроника
Introduction. The current advancement of 4H-SiC-based power electronics is driven by rapid progress in bulk and epitaxial growth technology of silicon carbide (SiC) crystals.
Aleksei V. Afanasev, Petr V. Afanasev, Vladimir A. Ilyin, Anton V. Serkov, Valentina V. Trushlyakova, Dmitry A. Chigirev, Sergey A. Shevchenko, Alexey Voskolovich, Semen A. Pologov   +8 more
doaj   +1 more source

In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]

, 2012
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent, Magnan, Pierre, Martin-Gonthier, Philippe   +2 more
core   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Projeto de um pré-amplificador para aparelho de auxílio à audição [PDF]

, 2012
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2010O presente trabalho descreve o projeto de um pré-amplificador para auxílio à audição em tecnologia ...
Campana Valderrama, Franco Renato
core  

How is Nanoarchitectonics Shaping Extracellular Vesicle Research?

Advanced Healthcare Materials, EarlyView.
The convergence of nanoarchitectonics and extracellular vesicle biology is reshaping next‐generation nanomedicine by enabling rationally designed nanostructures for enhanced EVs detection, engineering, and therapy. ABSTRACT Extracellular vesicles (EVs) have gained recognition as crucial mediators of cell‐to‐cell communication, holding immense potential
Madushani Dahanayake, Md Shahriar A. Hossain, Chia‐Hung Liu, Carlos Salomon, Yusuke Yamauchi, Mostafa Kamal Masud   +5 more
wiley   +1 more source

MOS Transistor Modeling for RF IC Design [PDF]

, 2000
The design of radio-frequency (RF) integrated circuits (ICs) in deep-submicron CMOS processes requires accurate and scalable compact models of the MOS transistor that are valid in the GHz frequency range and beyond. Unfortunately, the currently available
Enz, C., Enz, Christian, Christian Enz, Cheng, Y.   +3 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Cryogenic MOS Transistor Model [PDF]

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.
Jazaeri, Farzan, Beckers, Arnout, Enz, Christian   +2 more
core   +2 more sources