Results 71 to 80 of about 2,722,885 (226)

High‐Modulus Skeleton‐Reinforced PDMS Microstamps for Precision Transfer Printing of Microscale Devices

Advanced Functional Materials, EarlyView.
Elastomeric micropillars bend under contact loading, sliding microscale devices out of alignment during transfer printing. A hybrid PDMS stamp embeds a high‐modulus skeleton within each pillar while retaining a compliant contact surface. The reinforcement confines pillar deformation, suppressing interfacial sliding and preserving array registration on ...
Seol Ahn, Yulin Zhou, Jeongmin Seo, Seong Woo Hong, Sungyeon Kim, Seohyeon Kim, Haechang Ryu, Raudel Avila, Yei Hwan Jung   +8 more
wiley   +1 more source

Operation and modeling of the MOS transistor

, 2011
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern ...
Tsividis, Yannis, McAndrew, Colin
core  

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Electrical Characterization of Power Silicon Carbide MOSFETs with Linear and Hexagonal Base Cell Designs

Известия высших учебных заведений России: Радиоэлектроника
Introduction. The current advancement of 4H-SiC-based power electronics is driven by rapid progress in bulk and epitaxial growth technology of silicon carbide (SiC) crystals.
Aleksei V. Afanasev, Petr V. Afanasev, Vladimir A. Ilyin, Anton V. Serkov, Valentina V. Trushlyakova, Dmitry A. Chigirev, Sergey A. Shevchenko, Alexey Voskolovich, Semen A. Pologov   +8 more
doaj   +1 more source

Bulk-driven flipped voltage follower [PDF]

, 2009
A voltage buffer so-called the bulk-driven flipped voltage follower is presented. This proposal is based on the flipped voltage follower (FVF) technique, but a bulk-driven MOSFET with the replica-biased scheme is utilized for the input device to ...
Yasutaka Haga, Haga, Y., Kale, I., Izzet Kale   +3 more
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

The measurement of interface state charge in the MOS system [PDF]

, 1971
A simple method of measuring charge in surface states as a function of the surfacepotential in MOS transistor or MOS capacitors is proposed. A constant d.c.
Koomen, Jan
core   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Analytical current Model for Dual Material Double Gate Junctionless Transistor [PDF]

, 2019
A Transistor model with bulk current is proposed in this article for long channel dual material double gate junction less transistor. The influence of different device parameters such as body thickness, channel length, oxide thickness, and the doping ...
patil, shailaja chandrakant; savitribai phule pune university, pune, wagaj, santosh chandrakant; Savitribai Phule Pune University, Pune, Santosh Chandrakant Wagaj, Shailaja Chandrakant Patil   +3 more
core   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source