Results 271 to 280 of about 284,460 (322)
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Parametric study of laterally acoustically coupled bulk acoustic wave filters
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2012Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied.
Meltaus, J., Pensala, T., Kokkonen, K.
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Bulk acoustic wave interaction with guided optical waves
Applied Physics Letters, 1973An interaction between longitudinal or shear bulk acoustic waves and guided optical waves has been observed in single-mode and multimode polyurethane and sputtered glass optical waveguides. This interaction produces a number of effects — namely, mode conversion, amplitude modulation, and phase modulation — depending upon whether shear or longitudinal ...
G. B. Brandt, M. Gottlieb, J. J. Conroy
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Bulk acoustic waves in multilayer structures
2011 International Conference on Multimedia Technology, 2011A theoretical investigation of bulk acoustic waves in multilayer structures is presented. This investigation is based on a rigorous solution of wave equations with correct boundary conditions on all the layer surfaces. Obtained results give a possibility to calculate the film bulk acoustic wave resonators with arbitrary quantity of layers, including ...
V.I. Cherednick, M.Y. Dvoesherstov
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Bulk Acoustic and Surface Acoustic Waves
2000This chapter describes the excitation, detection and propagation of acoustic waves, including SAWs in various propagation media. Although I have tried to explain their physics as simple as possible, the content may seem difficult for readers who have dealt with SAW devices as an electronic element.
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Film bulk acoustic wave resonator technology
IEEE Symposium on Ultrasonics, 2002It is demonstrated that completely monolithic two-pole filters can be fabricated on silicon substrates using FBARs (film bulk acoustic resonators) and that these filters have low loss and reasonable bandwidth. A two-pole monolithic ladder filter operating in the 1-1.5 GHz range has been demonstrated.
S.V. Krishnaswamy +4 more
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Solidly Mounted Bulk Acoustic Wave Filters
MRS Proceedings, 2003ABSTRACTSelective RF filters based on solidly mounted thin film bulk acoustic wave resonator filters (SMR filters) are of great interest for mobile and wireless applications in the GHz frequency range. They are small in size, robust and can be integrated on silicon. The SMR configuration comprises a textured piezoelectric layer of AlN or ZnO sandwiched
H. P. Loebl +5 more
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Bulk acoustic wave attenuation in langatate
Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218), 2002The report is devoted to the study of the attenuation of bulk acoustic waves in crystals of LGT (La/sub 3/Ga/sub 5/ /sub .5/TaO/sub 0.5/O/sub 14/) - one of the most perspective materials for bulk acoustic wave piezoelectric resonators. Two methods of the experimental study and measurements of attenuation coefficient were used. The first method used was
G. Mansfeld, S. Alekseev, I. Kotelyansky
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Improving manufacturability of bulk acoustic wave and surface acoustic wave devices
2011 Symposium on Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2011Bulk acoustic wave (BAW/FBAR) or surface acoustic wave (SAW) technologies are widely used in making filters for wireless applications [1]. While it is no longer a great challenge to make reactively sputtered piezoelectric aluminum nitride (AlN) films suitable for BAW applications [3] or to make a standard SAW filter, there are critical devices that ...
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Narrow band bulk acoustic wave filters
IEEE Ultrasonics Symposium, 2004, 2005Bulk acoustic wave (BAW) filters are competing successfully in the range of 800 MHz to 10 GHz with SAW filters. USPCS and UMTS filters require a bandwidth of 60 MHz at approximately 2 GHz (fractional BW /spl Delta/f/f/spl ap/3%). This can be realized by optimum design and high quality piezoelectric AlN which allows figure of merit, k/sup 2/Q, values of
H.P. Loebl +7 more
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Thin film bulk acoustic wave resonator
The Journal of the Acoustical Society of America, 2005The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient k t 2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant
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