Results 261 to 270 of about 1,387,503 (298)
Some of the next articles are maybe not open access.
Structural defects in bulk and epitaxial CdTe
Materials Science and Engineering: B, 1993The advantages of growing bulk CdTe from the vapour are summarized and the structural defects present in material grown using three different vapour methods compared critically. Kawano's growth rate explanation of twin distribution is developed and the effect of growth conditions in anomalous cases is speculated upon.
K. Durose, A. Turnbull, P. Brown
openaire +1 more source
Defects in hydrothermally grown bulk ZnO
Applied Physics Letters, 2007Hydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52meV, respectively, were identified.
H. von Wenckstern +6 more
openaire +1 more source
Bulk micro-defect detection with low-angle illumination
Review of Scientific Instruments, 2021The detection of oxygen precipitates, voids, and other defects is critical for semiconductor wafer makers. One of the industry standard techniques for detecting these Bulk Micro-Defects (BMDs) is Semilab’s Light Scattering Tomograph (LST) system. In this measurement, unpatterned wafers are nominally cleaved in half. Illumination is applied to the front
T. Szarvas +9 more
openaire +2 more sources
Hydrogen-related defects in bulk ZnO
MRS Proceedings, 2009AbstractZinc oxide (ZnO) has attracted resurgent interest as an active material for energy-efficient lighting applications. An optically transparent crystal, ZnO emits light in the blue-to-UV region of the spectrum. The efficiency of the emission is higher than more “conventional” materials such as GaN, making ZnO a strong candidate for solid-state ...
Matthew D McCluskey +2 more
openaire +1 more source
Effects of Surface and Bulk Defects in InP
MRS Proceedings, 1987ABSTRACTUndoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and ...
C. Warren +4 more
openaire +1 more source
Signatures of the Effects of Defects on the Bulk Moduli of Crystalline Solids
SSRN Electronic Journal, 2020Abstract The small atomic region containing a defect in a crystalline solid is nonlinear elastic. In this paper, we consider a solid containing defects as a composite wherein the defected regions have a bulk modulus, K , different from that of the perfect crystal.
Richard G. Hoagland, Saryu J. Fensin
openaire +1 more source
Passivation of Surface and Bulk Defects in InP
MRS Proceedings, 1992ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level ...
Sathya Balasubramanian +3 more
openaire +1 more source
The Interaction of Bulk Defects with Surface Reconstructions
MRS Proceedings, 1991ABSTRACTIt is demonstrated by ultra-high vacuum transmission electron microscopy that subsurface dislocations and stacking faults strongly interact with the Au (001) (5×n) surface reconstruction. This effect is found in both bulk single crystal and thin fílm samples.
D. N. Dunn, L. D. Marks, K. L. Merkle
openaire +1 more source
Electronic Structure of Bulk and Defected CaCu3Ti4O12
ECS Transactions, 2006The calcium copper titanate CaCu3Ti4O12 is a distorted perovskite exhibiting a giant dielectric constant with non-ferroelectric temperature behavior. Recent investigations tend to attribute the origin of the anomalous behavior of CaCu3Ti4O12 dielectric properties to the presence of heterogeneous microstructure and grain boundary layers, excluding that ...
Alippi P +2 more
openaire +4 more sources
NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES
Selected Topics in Electronics and Systems, 2004As-grown, undoped III-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb , InSb , and Ga 1-x In x Sb via impurity doping and low temperature growth from nonstoichiometric melts and ...
R. Pino, null Youngok Ko, P.S. Dutta
openaire +1 more source