Results 21 to 30 of about 1,387,503 (298)
Defect chemistry of bulk and nanoscale PuO2 [PDF]
, 2022 The management of large stockpiles of Pu, separated from spent nuclear fuel or nuclear weapons programmes and stored as the oxide PuO2, requires an understanding of the material’s aging behaviour during interim storage. This includes characterising the effect of radiogenic impurities that accumulate at significant concentration over storage time ...
Neilson, William, Murphy, Samuel
openaire +2 more sources
Localisation of defects with time and frequency measurements using pulsed arrays [PDF]
, 2014 The frequency dependent directivity of the periodic permanent magnet transducer is to used extract information about the position of any discontinuities present in a sample. Two approaches are used; narrowband excitation, and broadband pulsed generation.
Hill, Samuel Joseph, Dixon, Steve M.
core +1 more source
Point defects on the (110) surfaces of InP, InAs, and InSb : A comparison with bulk [PDF]
, 2006 The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on
Johansson, Börje, +13 more
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Scientific Reports, 2022 In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum gallium oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration.
Jacqueline Cooke +6 more
doaj +1 more source
Chemosensors, 2022 Natural diamonds with a rich variety of optically blind and optically active nitrogen impurity centers were explored at a nano/microscale on the surface and in bulk by a number of advanced chemical and structural analytical tools in order to achieve a ...
Sergey Kudryashov +9 more
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Surface Structure and Electronic Properties of Lu3Al5O12
Crystals, 2021 Lu3Al5O12 (LuAG) is a famous scintillator that has the advantages of high efficiency, high light yield, and fast decay after being doped with active ions. F centers (oxygen vacancies with two electrons) and antisite defects are the most important defects
Weian Guo +3 more
doaj +1 more source
Resistivity of Surface Steps in Bulk-Insulating Topological Insulators
Frontiers in Materials, 2022 Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material.
Wonhee Ko +7 more
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Dopants and Impurity-Induced Defects in ZnO [PDF]
, 2020 In recent years, there has been resurgent interest in ZnO due to its efficient UV emission and potential application in opto-electronic devices. The problem of self-compensating defects, especially those related to acceptor-like dopants, remains a major ...
Ton-That, C +5 more
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Topological defects and SUSY RG flow
Journal of High Energy Physics, 2021 We study the effect of bulk perturbations of N=(2) superconformal minimal models on topological defects. In particular, symmetries and more general topological defects which survive the flow to the IR are identified.
I. Brunner, I. Mayer, C. Schmidt-Colinet
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Probing the effects of SHI and doping induced defects in nanocrystalline spinel ferrites
, 2005 Different types of defects have been introduced in ferrite thin films and bulk (powder) systems by implementing different methods namely swift heavy ion irradiation, impurity doping.and mechanical milling. Swift heavy ions (190 MeV Au ions and 150 MeV Ni
Gupta, Ajay (author) +7 more
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