Results 151 to 160 of about 7,504 (214)
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Ferroelectricity in zinc cadmium telluride
Physical Review Letters, 1989Ferroelectricity in ${\mathrm{Zn}}_{\mathrm{x}}$${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$Te was found from the temperature variation of the dielectric constant, and from the hysteresis loop. The Zn contents varied from 4% to 45%. No ferroelectricity was found in pure CdTe but all samples containing Zn had a second-order ferroelectric ...
, Weil +3 more
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The kinetics of the electrodeposition of cadmium telluride
Australian Journal of Chemistry, 1984The kinetics of the electrodeposition of CdTe from an aqueous solution containing CdSO4, TeO2 and H2SO4 were investigated by using a rotating ring-disc electrode. The results for tellurium deposition alone indicated that the reaction occurs through a six-electron reduction of HTeO2+ to H2Te, followed by a reaction between H,2Te and HTeO2+ yielding ...
Danaher W.J., Lyons L.E.
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Adsorption of zinc on cadmium telluride and mercury telluride surfaces
Physical Review B, 1991Modifications of the surface properties of cadmium and mercury telluride due to the adsorption of zinc atoms are investigated. The bulk band structure is obtained by parametrizing the matrix elements in an empirical tight-binding Hamiltonian. A tellurium-terminated (111) surface is formed by introducing an infinite repulsive potential localized within ...
K. A. I. L. Wijewardena +2 more
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Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride
Journal of Physics D: Applied Physics, 1983The different techniques of making ohmic contacts to p-type CdTe are reviewed and discussed. Mercury telluride, whose work-function matches perfectly that of p-type CdTe, is shown to be more favourable than Au or Pt. The HgTe contacts deposited by close spacing isothermal growth present a room temperature specific contact resistance ten times lower ...
E Janik, R Triboulet
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Semiconducting Cadmium Telluride
Physical Review, 1954Both $n$-type and $p$-type conductivity can be obtained in cadmium telluride. The intrinsic band gap of cadmium telluride is 1.45 ev. Electron and hole mobilities are at least 30 ${\mathrm{cm}}^{2}$/volt sec. The activation energies of $p$-type impurities are much larger than those of $n$-type impurities in cadmium telluride, indicating an explanation ...
Dietrich A. Jenny, Richard H. Bube
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Cadmium telluride and cadmium zinc telluride
2019CdTe and CdZnTe crystals are employed for several applications such as IR imaging, X- and gamma ray detection, optical devices, and photovoltaics. These applications require that crystals show peculiar properties. On the other hand, phase diagrams suggest possible growth technologies.
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Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors
Journal of Electronic Materials, 2005Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers.
R. Bommena +6 more
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Point defects and diffusion in cadmium telluride
Progress in Crystal Growth and Characterization of Materials, 2004Abstract Point defect thermodynamics at the solid–vapor equilibrium and point defect diffusion is reviewed in cadmium telluride with an emphasis on recent experimental findings. Principles and benefit of respective experimental methods studying defect structure both in situ in high-temperature thermodynamic equilibrium and frozen at room or lower ...
Grill R, Zappettini A
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Cadmium Telluride Nuclear Radiation Detectors
IEEE Transactions on Nuclear Science, 1975The characteristics and performance of undoped high resistivity cadmium telluride detectors are compared to chlorine compensated counters. It is shown, in particular, that "undoped" CdTe Is in fact aluminium doped and that compensation occurs, as in silicon or germanium, by pair and triplet formation between the group III donor and the doubly charged ...
Siffert, P. +4 more
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Synthesis and characterization of cadmium telluride nanowire
Nanotechnology, 2008CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm.
Maxwell C, Kum +6 more
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