Results 161 to 170 of about 7,504 (214)
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Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces
Journal of Applied Physics, 1980The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions.
Francis G. Courreges +2 more
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985
The surface compositions of Cd1−xMnxTe and CdTe that result from various chemical treatments have been studied by Auger electron spectroscopy. The depths of nonstoichiometric surface layers have been determined by sputter profiling. Bromine methanol and mineral acids leave surfaces depleted in Cd and Mn.
R. D. Feldman +2 more
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The surface compositions of Cd1−xMnxTe and CdTe that result from various chemical treatments have been studied by Auger electron spectroscopy. The depths of nonstoichiometric surface layers have been determined by sputter profiling. Bromine methanol and mineral acids leave surfaces depleted in Cd and Mn.
R. D. Feldman +2 more
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Applied Physics Letters, 2000
We report on photon-induced modifications in CdTe/MCT (cadmium telluride/mercury cadmium telluride) heterostructure interfaces formed by flash evaporated CdTe on to the bulk p-Hg0.8Cd0.2Te. Metal–insulator–semiconductor (MIS) test structures were processed and their electrical properties measured by capacitance–voltage (C–V) and current–voltage ...
O. P. Agnihotri +3 more
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We report on photon-induced modifications in CdTe/MCT (cadmium telluride/mercury cadmium telluride) heterostructure interfaces formed by flash evaporated CdTe on to the bulk p-Hg0.8Cd0.2Te. Metal–insulator–semiconductor (MIS) test structures were processed and their electrical properties measured by capacitance–voltage (C–V) and current–voltage ...
O. P. Agnihotri +3 more
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Semiconductor Science and Technology, 1993
The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which ...
Fisher, J.M. +4 more
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The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which ...
Fisher, J.M. +4 more
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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2010
Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Cadmium telluride matrix gamma camera
Medical Physics, 1980An experimental gamma camera that has significant performance has been designed, constructed, and tested. The new camera has a matrix of cadmium telluride semiconductors as the detecting medium. The detectors are located within the collimating holes (rather than behind them).
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1999
Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Electrooptic Constant of Cadmium Telluride
Applied Optics, 1967O M, Stafsudd +2 more
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Dynamic Gratings in Cadmium Telluride
Physica Status Solidi (a), 1979V. Kremenitskii, S. Odoulov, M. Soskin
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