Results 181 to 190 of about 224,096 (248)

Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors

Journal of Electronic Materials, 2005
Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers.
R. Bommena, C. Fulk, Jun Zhao, T. S. Lee, S. Sivananthan, S. R. J. Brueck, S. D. Hersee   +6 more
openaire   +1 more source

Cadmium Telluride Nuclear Radiation Detectors

IEEE Transactions on Nuclear Science, 1975
The characteristics and performance of undoped high resistivity cadmium telluride detectors are compared to chlorine compensated counters. It is shown, in particular, that "undoped" CdTe Is in fact aluminium doped and that compensation occurs, as in silicon or germanium, by pair and triplet formation between the group III donor and the doubly charged ...
Siffert, P., Cornet, A., Stuck, R., Triboulet, R., Marfaing, Y.   +4 more
openaire   +2 more sources

Point defects and diffusion in cadmium telluride

Progress in Crystal Growth and Characterization of Materials, 2004
Abstract Point defect thermodynamics at the solid–vapor equilibrium and point defect diffusion is reviewed in cadmium telluride with an emphasis on recent experimental findings. Principles and benefit of respective experimental methods studying defect structure both in situ in high-temperature thermodynamic equilibrium and frozen at room or lower ...
Grill R, Zappettini A
openaire   +3 more sources

Synthesis and characterization of cadmium telluride nanowire

Nanotechnology, 2008
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm.
Maxwell C, Kum, Bong Young, Yoo, Young Woo, Rheem, Krassimir N, Bozhilov, Wilfred, Chen, Ashok, Mulchandani, Nosang V, Myung   +6 more
openaire   +2 more sources

Thermal decomposition study of cadmium telluride (CdTe)

Materials Today: Proceedings, 2023
Zalak S. Kachhia, S. Chaki, R. Giri, Zubin R. Parekh, Rohitkumar M. Kannaujiya, Anilkumar B. Hirpara, M. Deshpande, J. Tailor   +7 more
semanticscholar   +1 more source

Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

Journal of Applied Physics, 1980
The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions.
Francis G. Courreges, Alan L. Fahrenbruch, Richard H. Bube   +2 more
openaire   +1 more source

Atomic structure, stability, and dissociation of dislocations in cadmium telluride

International journal of plasticity, 2023
Jun Yu Li, Kun Luo, Q. An
semanticscholar   +1 more source

Auger electron spectroscopic study of the etching of cadmium telluride and cadmium manganese telluride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985
The surface compositions of Cd1−xMnxTe and CdTe that result from various chemical treatments have been studied by Auger electron spectroscopy. The depths of nonstoichiometric surface layers have been determined by sputter profiling. Bromine methanol and mineral acids leave surfaces depleted in Cd and Mn.
R. D. Feldman, R. L. Opila, P. M. Bridenbaugh   +2 more
openaire   +1 more source

Photon-induced modifications in cadmium telluride/mercury cadmium telluride heterostructure interfaces

Applied Physics Letters, 2000
We report on photon-induced modifications in CdTe/MCT (cadmium telluride/mercury cadmium telluride) heterostructure interfaces formed by flash evaporated CdTe on to the bulk p-Hg0.8Cd0.2Te. Metal–insulator–semiconductor (MIS) test structures were processed and their electrical properties measured by capacitance–voltage (C–V) and current–voltage ...
O. P. Agnihotri, H. K. Sehgal, R. Pal, Vishnu Gopal   +3 more
openaire   +1 more source

In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

Semiconductor Science and Technology, 1993
The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which ...
Fisher, J.M., Berlouis, L.E.A., Rospendowski, B.N., Hall, P.J., Astles, M.G.   +4 more
openaire   +3 more sources