Results 191 to 200 of about 224,096 (248)
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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Thermopower of Plastically Deformed Cadmium Telluride
Physica Status Solidi (a), 1983The thermoelectric power S of p- and n-type CdTe is measured at temperatures between 100 and 300 K, before and after plastic deformation. The data for undeformed CdTe agree with theoretical considerations and results of previous work. A change of the carrier sign by plastic deformation of low carrier density n-type material is found. Upon deformation S
H. Müller, P. Haasen, W. Schröter
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Cadmium telluride matrix gamma camera
Medical Physics, 1980An experimental gamma camera that has significant performance has been designed, constructed, and tested. The new camera has a matrix of cadmium telluride semiconductors as the detecting medium. The detectors are located within the collimating holes (rather than behind them).
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2010
Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Self-diffusion of cadmium and tellurium in cadmium telluride
Journal of Physics and Chemistry of Solids, 1968Abstract The high temperature defect equilibria in CdTe have been investigated by measuring the ratiotracer self-diffusion coefficients of Cd109 and Te123 as functions of temperature, component partial pressure, and added impurity content. Profiles of the radiotracer concentration vs.
P.M. Borsenberger, D.A. Stevenson
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1999
Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Dynamic Gratings in Cadmium Telluride
Physica Status Solidi (a), 1979V. Kremenitskii, S. Odoulov, M. Soskin
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Electrooptic Constant of Cadmium Telluride
Applied Optics, 1967O M, Stafsudd +2 more
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The photosensitivity of cadmium telluride
Physica Status Solidi (a), 1974R. F. Kydd, F. J. Bryant
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