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Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors
Journal of Electronic Materials, 2005Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers.
R. Bommena +6 more
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2010
Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R.
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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1999
Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in
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Thermopower of Plastically Deformed Cadmium Telluride
Physica Status Solidi (a), 1983The thermoelectric power S of p- and n-type CdTe is measured at temperatures between 100 and 300 K, before and after plastic deformation. The data for undeformed CdTe agree with theoretical considerations and results of previous work. A change of the carrier sign by plastic deformation of low carrier density n-type material is found. Upon deformation S
H. Müller, P. Haasen, W. Schröter
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Thin-Film Cadmium Sulfide/Cadmium Telluride Alloys
MRS Proceedings, 1996AbstractThin films of CdTel-xSx with bulk atomic compositions, x≡[S]/([S]+[Te]), ranging from 0 to 0.45 were deposited by vacuum co-evaporation of CdTe and CdS with substrate temperatures of 200 and 250°C. X-ray diffraction analysis revealed that films with x < 0.3 were predominately single phase having the zincblende structure. Films with 0.35 <
D. G. Jensen +2 more
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Studies on cadmium telluride–cadmium selenide bilayer
Nanomaterials and Energy, 2015Group II–VI elements of the periodic table are suitable for electronic and optoelectronic applications. Cadmium selenide (CdSe) and cadmium telluride (CdTe) bilayer films were deposited onto well-cleaned glass substrates using vacuum evaporation technique.
Lakshmi Shree Balakrishnan +3 more
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Adsorption of zinc on cadmium telluride and mercury telluride surfaces
Physical Review B, 1991Modifications of the surface properties of cadmium and mercury telluride due to the adsorption of zinc atoms are investigated. The bulk band structure is obtained by parametrizing the matrix elements in an empirical tight-binding Hamiltonian. A tellurium-terminated (111) surface is formed by introducing an infinite repulsive potential localized within ...
K. A. I. L. Wijewardena +2 more
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