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A Subsampling Phase-Locked Loop with a Dual Charge Pump Based on Capacitor Multipliers for CMOS Image Sensor. [PDF]
Lin Y +8 more
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Qualification of a pulsed, millinewton class metal plasma thruster for broad mission applications. [PDF]
Frankovich JK +3 more
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A Quasi-Resonant System for High-Frequency Trans-Spinal Magnetic Stimulation (HF-TSMS). [PDF]
Marturano F +5 more
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DC Capacitor-Less Solid-State Variable Capacitor
IEEE Transactions on Power Electronics, 2021H -bridge-based single-phase applications have second-order harmonics on the dc-link voltage. Conventionally, the second-order harmonics are filtered by bulky dc capacitors to maintain the constant dc-link voltage, which results in poor power density and low reliability.
Yunting Liu
exaly +2 more sources
Capacitor-less 1-transistor DRAM
IEEE International SOI Conference SOI-02, 2002We review the current status of the 1T-DRAM development, illustrate how this concept can be extended to fully depleted (FD) SOI, and demonstrate a first circuit application. A memory circuit area reduction of 3 to 10 times can be achieved when compared to DRAM or SRAM reference circuits respectively.
null Fazan +10 more
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Real DC capacitor-less active capacitors
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017Single-phase pulse width modulation H-bridge active capacitors have second-order harmonic ripple voltages on the DC bus. The second-order harmonic power is usually filtered by a bulk capacitor on the DC bus to maintain a constant dc-bus voltage, which results in low power density. However, in applications like active capacitors, a larger DC bus voltage
Yunting Liu, Fang Zheng Peng
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A new capacitor-less LED drive
2016 13th International Multi-Conference on Systems, Signals & Devices (SSD), 2016In this paper a new capacitor-less LED drive is proposed. The design is based on the utilization of the internal capacitance of the LED to replace the smoothing capacitor. LED lighting systems usually have many LEDs for better illumination that can reach multiple tens of LEDs. Such configuration can be utilized to enlarge the total internal capacitance
Munir A. Al-Absi +2 more
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IEEE Electron Device Letters, 2002
A simple true 1 transistor dynamic random access memory (DRAM) cell concept is proposed for the first time, using the body charging of partially-depleted SOI devices to store the logic "1" or "0" binary states. This cell is two times smaller in area than the conventional 8F/sup 2/ 1T/1C DRAM cell and the process of its manufacturing does not require ...
S. Okhonin +3 more
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A simple true 1 transistor dynamic random access memory (DRAM) cell concept is proposed for the first time, using the body charging of partially-depleted SOI devices to store the logic "1" or "0" binary states. This cell is two times smaller in area than the conventional 8F/sup 2/ 1T/1C DRAM cell and the process of its manufacturing does not require ...
S. Okhonin +3 more
openaire +1 more source

