Results 1 to 10 of about 26,331 (111)
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Micromachines, 2020 Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Hyeonjeong Kim +5 more
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Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM
Micromachines, 2021 A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM).
Yejin Ha +3 more
doaj +2 more sources
Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM
Micromachines, 2020 A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Songyi Yoo, Wookyung Sun, Hyungsoon Shin
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A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
Micromachines, 2022 A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of ...
Dongxue Zhao +5 more
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Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, 2023 Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices.
Juhee Jeon, Kyoungah Cho, Sangsig Kim
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1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
Advanced Intelligent SystemsThe rapid advancements in the field of autonomous systems have led to a significant demand for artificial‐intelligence‐of‐things (AIoT) edge‐compatible neuromorphic training accelerators with continual/online learning capability.
MD Yasir Bashir +2 more
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Nanomaterials, 2022 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using ...
Hee Dae An +11 more
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Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure
IEEE Access, 2021 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon nanotube structure with a grain boundary (GB) is designed and analyzed using technology computer-aided design (TCAD) simulation.
Jin Park +11 more
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Nanomaterials, 2023 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD ...
Jin Park +11 more
doaj +1 more source
Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application
IEEE Journal of the Electron Devices Society, 2022 The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee +4 more
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