Results 1 to 10 of about 1,208,885 (201)

Fabrication of high-performance dual-gate ISFET pH sensors using In2O3 nano-channel

Current Research in Biotechnology, 2023
Here, a high-performance dual-gate ionsensitive field-effect transistor (ISFET) was designed for pH detection based on the high carrier mobility and chemical stability of In2O3.
Yiqing Wang, Fei Wu, Xun Wang, Song Ding, Wei Zhang, Jidong Jiang, Yijun Tan   +6 more
doaj   +3 more sources

Single and dual-gate organic field-effect transistors based on diketopyrrolopyrrole-diethienothiophene polymers: performance modulation via dielectric interfaces

Materials Research Express, 2021
Low-power, flexible, and properly encapsulated integrated circuits are the basic requirements of the solution-processed printed and wearable electronic prototypes for various emerging applications including display circuits, sensors, and radio-frequency ...
Basanagouda B Patil, Yasunori Takeda, Subhash Singh, Amandeep Singh, Thu Trang Do, Kostya (Ken) Ostrikov, Samarendra P Singh, Shizuo Tokito, Ajay K Pandey, Prashant Sonar   +9 more
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Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

Nanomaterials, 2023
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD ...
Jin Park, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang   +11 more
doaj   +1 more source

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Micromachines, 2023
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +1 more source

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

IEEE Access, 2021
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon nanotube structure with a grain boundary (GB) is designed and analyzed using technology computer-aided design (TCAD) simulation.
Jin Park, Min Su Cho, Sang Ho Lee, Hee Dae An, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sin-Hyung Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang   +11 more
doaj   +1 more source

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

IEEE Journal of the Electron Devices Society, 2022
Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching.
Dai-Jie Lin, Jhih-Yuan Yang, Chih-Kang Chang, Jian-Jang Huang   +3 more
doaj   +1 more source

Origin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure

AIP Advances, 2020
In this paper, we report the electrical characteristics of thin active layer indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) having an asymmetric dual gate structure.
Jeongmin Kim, Jaewook Jeong
doaj   +1 more source

Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS₂ Transistors

Nanomaterials, 2021
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics.
Qingguo Gao, Chongfu Zhang, Ping Liu, Yunfeng Hu, Kaiqiang Yang, Zichuan Yi, Liming Liu, Xinjian Pan, Zhi Zhang, Jianjun Yang, Feng Chi   +10 more
doaj   +1 more source

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

Nanomaterials, 2022
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using ...
Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang   +11 more
doaj   +1 more source

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

Applied Sciences, 2018
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and ...
Rei Shiwaku, Masataka Tamura, Hiroyuki Matsui, Yasunori Takeda, Tomohide Murase, Shizuo Tokito   +5 more
doaj   +1 more source