Results 21 to 30 of about 1,208,885 (201)

Dual-Mode Logic Gate for Intelligent and Portable Detection of MicroRNA Based on Gas Pressure and Lateral Flow Assay

, 2023
Molecular logic gate provides an intelligent option for simultaneous detection of biomarkers. Herein, a dual-mode DNA logic gate was proposed to portably and intelligently detect multiple microRNAs (miRNAs) by gas pressure biosensing and lateral flow ...
Lu Shi (702610), Baoxin Li (589831), Chaoyong Yang (13531), Yan Jin (143500), Qiaorong Tang (9750710), Bing Yang (142278), Wei Liu (20030)   +6 more
core   +1 more source

Characteristics of Gallium Nitride-Based Dual-Gate Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with Gate Oxide Layers Directly Grown by Photoelectrochemical Oxidation Method

Micromachines
To minimize the influence of interface states and surface damage, by inserting a gate oxide layer, the photoelectrochemical oxidation method was utilized to directly grow the gate oxide layer while simultaneously creating the gate-recessed regions onto ...
Zih-Siang Hung, Hsin-Ying Lee, Ricky W. Chuang, Ching-Ting Lee   +3 more
doaj   +1 more source

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

IEEE Access, 2020
A compact drain current model is developed for an asymmetric, dual gate, monolayer 2 - D Transition metal dichalcogenide (TMD) field effect transistor (FET) in the subthreshold region.
Niraj Kumar Singh, Monika Kumari, Manodipan Sahoo   +2 more
doaj   +1 more source

Improving the electrical stability of a‐IGZO TFT through gate surround structures

Electronics Letters, 2023
This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively enveloping all four ...
Eun Seong Yu, Seung Gyun Kim, Seung Jae Moon, Byung Seong Bae   +3 more
doaj   +1 more source

High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer

, 2011
In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described.
Ha, Tae-Jun, Sonar, Prashant, Dodabalapur, Ananth, Prashant Sonar, Tae-Jun Ha, Ananth Dodabalapur   +5 more
core   +1 more source

Improved Endurance in HfZrO_x-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture

IEEE Journal of the Electron Devices Society
This paper presents an asymmetric dual-gate (ADG) junctionless ferroelectric thin-film transistor (JL-FeTFT) featuring a HfZrOx ferroelectric layer and a heavily doped n+ poly-Si channel.
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Ta-Chun Cho, Jhao-Fong Deng, Yen-Lun Hsieh, Huan Hsu, Tzu-Chi Liu, An-de Xu, Che-Hsun Tsai   +9 more
doaj   +1 more source

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

npj 2D Materials and Applications, 2021
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet.
Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu   +6 more
doaj   +1 more source

Low leakage dynamic circuits with dual threshold voltages and dual gate oxide thickness

, 2007
In this paper, a low leakage circuit technique is proposed for simultaneously reducing the subthreshold and gate oxide leakage power in domino logic circuits. NMOS sleep transistors and dual threshold voltages, dual gate oxide thickness CMOS technologies
Song Yang, Zhi jia Yang, Yang S(杨松), Yang ZJ(杨志家), Hong Wang, Wang H(王宏)   +5 more
core   +1 more source

Performance Evaluation of Nanoscale Single- and Dual-Gate MESFETs Using COMSOL Multiphysics

Journal of ICT Research and Applications
In this work, a comparative numerical simulation of single-gate and double-gate depletion mode GaAs MESFETs in the nanometer domain using COMSOL Multiphysics was carried out.
Odai M. Bakrshoom, Mohammed F. Alharbi, Mohammed S. Nazer, Ahmed M.A.A. Elngar   +3 more
doaj   +1 more source

Evaluating the performance of triple and double metal gate charge plasma transistors for applications in biological sensors at a dual cavity location

Measurement: Sensors
Background: Biosensors have become essential tools in biotechnology, environmental monitoring, and healthcare industries due to their ability to detect and analyze biological signals.
Akanksha Singh, Rajendra Kumar
doaj   +1 more source