Results 11 to 20 of about 1,208,885 (201)
The dual-gate lumen model of renal monoamine transport
Marty Hinz1, Alvin Stein2, Thomas Uncini31Clinical Research, NeuroResearch Clinics, Inc. Cape Coral, Florida, USA; 2Stein Orthopedic Associates, Plantation, Florida, USA; 3DBS Labs, Duluth, Minnesota, USAAbstract: The three-phase response of urinary ...
Marty Hinz, Alvin Stein, Thomas Uncini
doaj +1 more source
Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Taylor, M.R.S. +6 more
core +9 more sources
Analytical current Model for Dual Material Double Gate Junctionless Transistor [PDF]
A Transistor model with bulk current is proposed in this article for long channel dual material double gate junction less transistor. The influence of different device parameters such as body thickness, channel length, oxide thickness, and the doping ...
patil, shailaja chandrakant; savitribai phule pune university, pune +1 more
core +1 more source
Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks [PDF]
The self-gain of surface channel compressively strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks is investigated for a range of gate lengths down to 55 nm.
Majhi, Prashant +3 more
core +1 more source
Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks [PDF]
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate stacks has been characterized alongside that of unstrained-Si pMOSFETs.
Majhi, Prashant +4 more
core +1 more source
Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film
This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact,
Yoonhyuck Yi +8 more
doaj +1 more source
We demonstrate the functionalization of silicon nanowire based field effect transistors (SiNW FETs) FETs with stimuli-responsive polymer brushes of poly(N-isopropylacrylamide) (PNIPAAM) and poly(acrylic acid) (PAA).
Stephanie Klinghammer +5 more
doaj +1 more source
A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage.
Yoshitaka Shingaya +7 more
doaj +1 more source
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility ...
Yuhao Zhu +8 more
doaj +1 more source
Comparison between conventional duplex ultrasonography and the dual-gate Doppler mode for hemodynamic measurements of the carotid arteries [PDF]
Purpose This study investigated the correlations of hemodynamic parameters measured to quantify stenosis between the gold-standard duplex ultrasonography and the dual-gate Doppler mode.
Jeanne Hersant +7 more
doaj +1 more source

