Results 1 to 10 of about 31,431,766 (171)
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
NanomaterialsIn this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure.
Sang Ho Lee +3 more
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Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances
IEEE Access, 2021 In this work, a capacitorless one-transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) metal–oxide–semiconductor field-effect transistor was designed and analyzed through a technology computer-aided
Sang Ho Lee +8 more
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2T1C DRAM based on semiconducting MoS2 and semimetallic graphene for in-memory computing
National Science Open, 2023 In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence (AI) and break the memory wall. In this work, we propose a 2T1C DRAM structure for in-memory computing.
Gou Saifei +8 more
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Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM
Micromachines, 2021 A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM).
Yejin Ha +3 more
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Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application
IEEE Journal of the Electron Devices Society, 2022 The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee +4 more
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Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, 2023 Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices.
Juhee Jeon, Kyoungah Cho, Sangsig Kim
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Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Micromachines, 2020 Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Hyeonjeong Kim +5 more
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Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM
Micromachines, 2020 A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Songyi Yoo, Wookyung Sun, Hyungsoon Shin
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Nanomaterials, 2023 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD ...
Jin Park +11 more
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Nanomaterials, 2022 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using ...
Hee Dae An +11 more
doaj +1 more source