Results 11 to 20 of about 31,431,766 (171)

A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications

open access: yesMicromachines, 2018
These days, the demand on electronic systems operating at high temperature is increasing owing to bursting interest in applications adaptable to harsh environments on earth, as well as in the unpaved spaces in the universe.
Myeongsun Kim   +5 more
doaj   +2 more sources

Population-based incremental learning with associative memory for dynamic environments [PDF]

open access: yes, 2008
Copyright © 2007 IEEE. Reprinted from IEEE Transactions on Evolutionary Computation. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Brunel University's ...
Yang, S, Yao, X
core   +7 more sources

Random number generation and working memory. [PDF]

open access: yes, 2007
We demonstrate the close relationship that exists between random sequence generation and working memory functioning. We clarify the nature of this link by examining the impact of concurrent requirements for random sequence response quality.
Towse, John N., Cheshire, Andrea
core   +4 more sources

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

open access: yesIEEE Access, 2021
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon nanotube structure with a grain boundary (GB) is designed and analyzed using technology computer-aided design (TCAD) simulation.
Jin Park   +11 more
doaj   +1 more source

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

open access: yesScientific Reports, 2022
In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed ...
Sang Ho Lee   +7 more
doaj   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

open access: yes, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z.   +6 more
core   +1 more source

March AB, March AB1: new March tests for unlinked dynamic memory faults [PDF]

open access: yes, 2005
Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to
Di Natale, Giorgio   +9 more
core   +1 more source

A single-transistor memory cell and sense amplifier for a gallium arsenide dynamic random access memory [PDF]

open access: yes, 1992
This thesis presents the design and layout of a Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM) cell. Attempts have been made at producing GaAs DRAM cells, but these have dealt with modifications to the fabrication process, are expensive ...
Vagts, Christopher Bryan
core   +2 more sources

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage

open access: yesNanomaterials, 2022
In this study on multi-nanosheet field-effect transistor (mNS-FET)—one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension—3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage from ...
Changhyun Yoo   +4 more
doaj   +1 more source

One electron-controlled multiple-valued dynamic random-access-memory [PDF]

open access: yes, 2016
We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET).
H. W. Kye   +15 more
core   +1 more source

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