Results 41 to 50 of about 26,331 (111)

Current-Mode Readout of Dynamic Random-Access Memories [PDF]

Port Said Engineering Research Journal, 2012
During the reading of one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM) cells, the need arises to amplify a small voltage difference (in the order of 30 to 100 mV) by a suitable sense amplifier.
doaj   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

On the Low-Frequency Noise Characterization of Z²-FET Devices

IEEE Access, 2019
This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-
Carlos Marquez, Carlos Navarro, Santiago Navarro, Jose L. Padilla, Luca Donetti, Carlos Sampedro, Philippe Galy, Yong-Tae Kim, Francisco Gamiz   +8 more
doaj   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect

, 2021
A polycrystalline silicon (poly-Si) capacitorless one-transistor dynamic random-access memory (1T DRAM) has been successfully fabricated and characterized.
선우경, 신형순
core   +1 more source

Ferroelectric Properties of Polyvinylidene Fluoride (PVDF): Advances and Prospects for Emerging Applications

Macromolecular Chemistry and Physics, Volume 227, Issue 2, 29 January 2026.
This review surveys how PVDF's ferroelectric behavior emerges from structure, processing, and phase engineering, and how it translates into memory, neuromorphic, and sensing technologies. Performance is benchmarked against leading inorganic ferroelectrics, while composites and hybrid systems are discussed as routes to improved endurance and ...
Achidi Frick, David Schreuder, Alejandra Castro‐Chong, Elizabeth von Hauff   +3 more
wiley   +1 more source

A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters [PDF]

, 2018
The band-modulation and sharp-switching mechanisms in Z²-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations.
Martinie, S., Barbé, Jean-Charles, Kim, Y-T., Y. Taur, S. Martinie, Asenov, A., Parihar, S., Lacord, J., C. Le Royer, Gamiz, F., F. Gamiz, Mescot, X., Y. Xu, J. Lacord, M.S. Parihar, J. Wan, Galy, Ph., Ph. Galy, A. Asenov, X. Mescot, Parihar, M.S., Le Royer, C., Fonteneau, P., S. Cristoloveanu, C. Navarro, Bawedin, M., Barbe, J.-Ch., El Dirani, H., Duan, M., Xu, Y., Cristoloveanu, S., B. Cheng, Y-T. Kim, Navarro, C., Lee, K.H., Adamu-Lema, F., J.-Ch. Barbe, Taur, Y., Cheng, B., H. El Dirani, Mescot, Xavier, F. Adamu-Lema, Wan, J., P. Fonteneau, M. Bawedin, K.H. Lee, M. Duan   +46 more
core   +1 more source

Optimization Method for the Memory Performance of Poly-Si 1T-DRAM

, 2021
현대 사회는 빅데이터 사회로 방대한 양의 데이터를 빠르고 정확하게 처리하기 위해서는 고성능 메모리가 반드시 필요하다. 그 중 Dynamic Random Access Memory (DRAM)은 1트랜지스터-1캐패시터의 비교적 간단한 구조로 동작 속도가 빠르고 고집적이 가능하여 각종 전자기기의 주 메모리로 사용되어 왔다. DRAM은 캐패시터 안에 저장되는 전하의 차이로 데이터를 구별하며 안정적인 메모리 동작을 위해 일정 이상의 정전용량이 확보되어야 한다.
유송이
core   +1 more source

Simulation Perspectives of Sub-1V Single-Supply Z²-FET 1T-DRAM Cells for Low-Power

IEEE Access, 2019
With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance.
Carlos Navarro, Carlos Marquez, Santiago Navarro, Carmen Lozano, Sehyun Kwon, Yong-Tae Kim, Francisco Gamiz   +6 more
doaj   +1 more source

Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications

Advanced Materials, Volume 37, Issue 50, December 17, 2025.
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong   +9 more
wiley   +1 more source