Results 61 to 70 of about 26,331 (111)
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Advanced Electronic Materials, Volume 11, Issue 7, May 2025.Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger +8 more
wiley +1 more source
Riboflavin‐Catalyzed Photoinduced Atom Transfer Radical Polymerization
Macromolecular Chemistry and Physics, Volume 226, Issue 7, April 2025.PhotoATRP of methyl acrylate with riboflavin (RF) and CuBr2/Me6TREN as a dual catalytic system is successfully carried out under a green LED light. The process demonstrated high chain‐end fidelity, efficient oxygen tolerance, and controlled polymerization kinetics, driven primarily by reductive quenching of RF.
Halil Ibrahim Coskun +5 more
wiley +1 more source
Memory Characteristics of 1T-DRAM Cell by Channel Structure
, 2012 : We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated.
Won-ju Cho +4 more
core
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
Advanced Materials Interfaces, Volume 12, Issue 3, February 3, 2025.This review focuses on the device structure and working principle of hafnium oxide based ferroelectric memories, the preparation strategy of hafnium oxide based thin films and the method of optimizing ferroelectric memories performance. The effect of magnetron sputtering on ferroelectric properties of Hf0.5Zr0.5O2 thin films and its optimization ...
Kun Chen +4 more
wiley +1 more source
A BJT based 1T-DRAM cell having SiGe heterostructure
, 2012 As the DRAM cell shrinks, the down scaling becomes increasingly difficult in particular due to the capacitor which has become harder to scale. In order to overcome cell area scalability and process complexity issues of 1T-1C DRAM, the capacitor-less 1T ...
심경석
core
PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsCompute-in-memory (CiM) accelerators perform matrix vector multiplications (MVMs) directly inside memory arrays, reducing data movement and improving both energy efficiency and throughput for artificial intelligence (AI) workloads.
Samyak Chakrabarty +8 more
doaj +1 more source
Modeling, simulation and electrical characterization of 1T-DRAM cell : A2RAM
, 2019 Avec la croissance de transfert de données, principalement à cause des applications de type internet des objets, il y a un besoin accru de système de stockage (mémoires).
Tcheme wakam, Francois
core
, 2022 R code implementation of the Dundee Root Analytical Model (DRAM) for calculation of mechanical root reinforcement as function of direct shear displacements in soil (version 0.1.1)
Meijer, Gerrit, G. J. Meijer
core +1 more source
Comparative Study of Steep Switching Devices for 1T Dynamic Memory
Tecnología en MarchaThis work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha +3 more
doaj +1 more source