Results 71 to 80 of about 26,331 (111)
, 2021 The present work explores the electrochemical energy storage performance of Ti3C2Tx (MXene) and 1T-VS2 nanosheet hybrids synthesized by a simple in situ hydrothermal method.
Chandra Sekhar Rout +7 more
core +1 more source
, 2016 In this work, a 1-transistor (1T) dynamic random access memory (DRAM) cell based on a tunnel field-effect transistor (TFET) is introduced and its operation physics demonstrated.
Park, Byung-Gook +2 more
core +1 more source
A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM
, 2008 A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single ...
Park, Yun-Chang +13 more
core +1 more source
Ultra-low power 1T-DRAM in FDSOI technology
, 2017 International audienceA systematic study of a capacitorless 1T-DRAM fabricated in 28 nm FDSOI technology is presented. The operation mechanism is based on band modulation.
Martinie, S. +32 more
core +1 more source
PA-DRAM: Reducing Access Latency With Pre-Amplifying
IEEE AccessDynamic random-access memory (DRAM) is used as the main memory in modern computing systems, but access latency has not improved as much as cell density and bandwidth, leading to a critical bottleneck between the CPU and memory.
Ju Hong Min +3 more
doaj +1 more source
A new 1T DRAM Cell With Enhanced Floating Body Effect
, 2006 Recently the semiconductor industry tends to develop a smaller volume device and system with lower power consumption, lower leakage current, and high speed performance.
Chang, Chong-Lin
core
, 2009 A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si1-yCy substrate is presented for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM.
Kim, Chung-Jin +16 more
core +1 more source
Modélisation, simulation et caractérisation électrique de cellule mémoire DRAM 1T : A2RAM
, 2019 With the growing of IOTs we need specific embedded memory which will be easily implemented in IOTs applications. This memory has to respect specific requirements; like: simple operation mode, high density, low power consumption, low cost.
Tcheme Wakam, Francois
core
Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures
, 2011 This work investigates the behavior of Ultra Thin BOX (UTBOX) FDSOI devices used as a memory cell 1T-DRAM (single transistor dynamic random access memory) at high temperatures through 2D numerical simulations.
Luciano M. Almeida +5 more
core +1 more source
MSDRAM, A2RAM and Z 2 -FET performance benchmark for 1T-DRAM applications
, 2018 session Memory (12.4)International audienceIn this study, we propose a benchmark of performance between three promising 1T-DRAM device structures on SOI substrate: MSDRAM, A2RAM and Z 2 -FET.
Tcheme Wakam, Francois +15 more
core +1 more source