Moore's Law, Increasing Complexity, and the Limits of Organization: The Modern Significance of Japanese Chipmakers' DRAM Business [PDF]
The purpose of this paper is to identify the organizational constraints on science innovations in the midst of the increasing complexity of technology and markets and to search for measures to overcome them.
HASHIMOTO Norikazu, CHUMA Hiroyuki
core
A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
, 2008 The scaling requirements of conventional DRAMs lead to the recent developments of capacitorless single-transistor (1T) DRAM in SOI technology. We propose a new concept of IT-DRAM (named MSDRAM), which is simple to fabricate, program, and read.
Flandre, Denis +2 more
core +1 more source
A Vertical Middle Partial Insulation Structure for Capacitorless 1T-DRAM Application
, 2011 In this thesis, we propose a novel vertical MOSFET device with middle partial insulator (MPI) or VMPI for capacitorless one transistor dynamic random access memory (1T-DRAM) application.
Chen, Cheng-Hsin
core
A Novel Device Design with Enlarged Storage Region for Retention Enhancement of 1T DRAM Cell
Dynamic random-access memory (DRAM) is popular as a main memory due to fast and reliable memory. DRAM has a simple architecture with only one transistor and one capacitor, making it low-power and highly integrated [1] .
Elatab, Nazek, Ansari, Md. Hasan Raza
core +1 more source
Novel Vertical Transistor with N-channel and Isolation Oxide for 1T-DRAM Application
, 2015 In this thesis, we propose vertical transistor with n-channel and isolation oxide(NCIOVT) 1T-DRAM and vertical transistor with n-channel and trench(NCTVT) 1T-DRAM with ultra-thin body structure for silicon-on-insulator. As the conventional 1T-DRAM scales
Lu, Dai-Rong
core
A New U Well 1T DRAM Cell Using Bias for Enhancing Floating Body Effect
, 2007 This article focuses on \ue2Floating Body Effect\ue2 of PD-SOI (partial depletion silicon-on-insulator), because the conventional PD-SOI 1T DRAM (one transistor of dynamic random access memory) cell can\ue2t be held impact ionization produced carriers ...
Liu, Cheng-Heng
core
A Capacitorless Triple-Gate 1T-DRAM with Middle Partial Insulation and Current Bridge
, 2013 In this paper, we propose a novel triple-gate middle partial insulator (TGMPI) with current bridge structure for capacitorless one transistor dynamic random access memory (1T-DRAM) application.
Chen, Yun-ru
core
A New Extended Body FinFET for 1T-DRAM Application
, 2014 In this paper, we propose a new extended body FinFET (EB-FinFET) for one transistor dynamic random access memory (1T-DRAM) application. As the device scales down, 1T-DRAM faces the challenge of an insufficient storage region.
Chang, Cheng-Hsien
core
Doping-less 1T-DRAM With Schottky Contact and Raised Body For Low Power Application
, 2018 In this thesis, we propose a novel structure of Doping-less 1T-DRAM with raised body and Schottky contact S/D. As the device has not any physical doping, it is expected to be free from problems associated with random dopant fluctuations and thermal ...
Lin, Hung-Hsiu
core
학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2024.2,[iii, 37p. :]PMA)이 계면 트랩에 미치는 효과를 분석하기 위해 대조군인 2 차원 평면형 소자와 실험군인 3 차원 소자에 대해 비교 실험을 수행했다. 계면 트랩을 추출하기 위해 charge pumping method 와 unified subthreshold coupling factor technique 를 이용했고, 비록 추출 방법은 다르더라도 추출 값 자체가 서로 유사함을
Chun, Jai-Houb, 천재협
core +1 more source