Results 51 to 60 of about 26,331 (111)
LOW POWER AND IMPROVED SPEED 1T DRAM USING DYNAMIC LOGIC [PDF]
The new trend of the DRAM design is to characterize by its reliability, delay, low power dissipation, and area. This paper dealt with the design of 1-bit DRAM and efficient implementation of a sense amplifier.
T. NIRMALRAJ +2 more
doaj
Non-destructive read 1T-DRAM with p–n junction gate for overcoming scaling limitations [PDF]
This paper presents a p–n junction gate dynamic random-access memory (DRAM) architecture that addresses the scaling limitations of conventional 1T1C DRAM and the structural challenges of capacitor-less 1T0C and 2T0C designs. The proposed device employs a
Eungi Hwang +5 more
doaj +1 more source
Metabolic Potential of Candidatus Saccharimonadia Including Rare Lineages in Activated Sludge
Candidatus Saccharimonadia is ubiquitously found in activated sludge processes, but its ecophysiological characteristics remain poorly understood. Metagenome analysis of Ca. Saccharimonadia in size‐fractionated activated sludge revealed that the epiparasitic lifestyle may extend to diverse lineages of Ca.
Shuka Kagemasa +5 more
wiley +1 more source
These days, the demand on electronic systems operating at high temperature is increasing owing to bursting interest in applications adaptable to harsh environments on earth, as well as in the unpaved spaces in the universe.
Myeongsun Kim +5 more
doaj +1 more source
Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions
Neuromorphic computing reduces energy costs by integrating memory and processing in event‐driven architectures, achieving energy usage as low as 10–30 pJ per operation for memcapacitor‐based synapses. Memcapacitors are reviewed as strong contenders for neuromorphic computing, enhancing AI acceleration through charge‐based computations, high resistance,
Nada AbuHamra +4 more
wiley +1 more source
Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM
The isolation-dielectric effects of a FinFET structure with a partially depleted (PD) silicon-on-insulator (PDSOI) region as a charge storage node on the characteristics of 1T-DRAM are reported in this brief. By introducing the low-permittivity isolation
Kim, Chung-Jin +3 more
core +1 more source
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure.
Sang Ho Lee +3 more
doaj +1 more source
Optoelectronic Devices for In‐Sensor Computing
The raw data obtained directly from sensors in the noisy analogue domain is often unstructured, which lacks a predefined format or organization and does not conform to a specific data model. Optoelectronic devices for in‐sensor visual processing can integrate perception, memory, and processing functions in the same physical units, which can compress ...
Qinqi Ren +7 more
wiley +1 more source
1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing
Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead.
Md Yasir Bashir +2 more
doaj +1 more source
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio +2 more
wiley +1 more source

