Results 171 to 180 of about 20,670 (208)
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A novel capacitor-less DRAM with raised source structure
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014We proposed a new 1T-DRAM cell with raised source structure. The cell using the raised source region can achieve the characteristics of long gate length one in a limited area and it can suppress short channel effects to improve the gate controllability.
Dai-Rong Lu +7 more
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A fast self-reacting capacitor-less low-dropout regulator
2011 Proceedings of the ESSCIRC (ESSCIRC), 2011A fast self-reacting (FSR) low-dropout (LDO) regulator with triple transient improved loops was implemented in 0.35μm CMOS technology. The proposed regulator for SoC application can achieve high stability for load current from zero to 100mA. The FSR loops can accelerate load transient responses while the regulator achieves the FOM of only 0.00675 (ps ...
Chia-Min Chen, Chung-Chih Hung
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A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks
2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 2019CMOS neuron circuits used to implement neuromorphic chips require extensive circuitry to program the memristive cell, thus eliminating most of the density advantage gained by the adoption of memristive synapses. This paper presents a CMOS neuron circuit that provides a compact and cost-efficient programming interface in which semiconductor capacitors ...
H. Aziza +4 more
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TCAD Analysis of III-V capacitor-less A2RAM cells
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 20192D-TCAD simulations are conducted on III-V materials to demonstrate the feasibility of implementing A2RAM cells using non-silicon substrates. InGaAs-OI is selected based on its reduced band-gap and improved mobility. Results demonstrate valid memory behavior, further scaling perspectives than other 1T -DRAM cells and limited impact of supercoupling ...
Carlos Navarro +3 more
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Low Drop-Out Voltage Regulators: Capacitor-less Architecture Comparison
IEEE Circuits and Systems Magazine, 2014Demand for system-on-chip solutions has increased the interest in low drop-out (LDO) voltage regulators which do not require a bulky off-chip capacitor to achieve stability, also called capacitor-less LDO (CL-LDO) regulators. Several architectures have been proposed; however comparing these reported architectures proves difficult, as each has a ...
Joselyn Torres +6 more
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Novel Smoothing Capacitor-less ARCP Scheme Soft Switching Inverter
IEEJ Transactions on Industry Applications, 2010The novel ARCP scheme soft switching inverter without smoothing capacitor in the input DC voltage side is proposed in this paper. The proposed ARCP soft switching inverter can achieve the zero voltage soft switching transition in the main switch, and the zero current soft switching transition in the additional auxiliary switch, in the same way as the ...
Masayoshi Yamamoto +2 more
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A Novel Capacitor-less 2-T SOI DRAM Cell
2007 International Semiconductor Device Research Symposium, 2007The capacitor in conventional 1T/1C DRAM cell accounts for large area and can hardly be realized by SOI technology. This cell can operate in low voltage, but needs super shallow junction, which is difficult to realize in process and not suitable for scaling down.
null Guohe Zhang +2 more
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Capacitor-Less Photovoltaic Cell-Level Power Balancing using Diffusion Charge Redistribution
IEEE Transactions on Power Electronics, 2014This paper presents a new strategy, diffusion charge redistribution (DCR), for balancing power among photovoltaic cells to increase energy extraction and to improve maximum power-point tracking (MPPT) efficiency under partial shading conditions. With DCR, testing and binning during cell manufacturing can be eliminated and significant cost savings can ...
Arthur H. Chang +2 more
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Electrolytic Capacitor-Less Multilevel Inverter with AC-DC Energy Conversion
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC), 2019This paper references the multilevel inverter topology developed by the graduates of the laboratory to achieve AC-DC energy conversion without increasing or decreasing components. Using TMS320F28035 digital signal processor (DSP), which is produced by TI, to control switch and realizes bidirectional multilevel inverter.
Guo-Kai Wu, Ke-Sin Su, Jiann-Fuh Chen
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Reliability study in capacitor less 1T-RAM cells on SOI
2010 IEEE International SOI Conference (SOI), 2010We have shown that careful optimization of the write conditions is needed in order to achieve the stringent endurance spec of 1016 cycles for 1T-RAM cells without compromising the sense margin and retention. The degradation seen during cycling of the cells can be attributed to the creation of interface states and carrier trapping at either the source (“
M. Aoulaiche +10 more
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