Results 251 to 260 of about 20,353 (286)

DC Capacitor-Less Solid-State Variable Capacitor

IEEE Transactions on Power Electronics, 2021
H -bridge-based single-phase applications have second-order harmonics on the dc-link voltage. Conventionally, the second-order harmonics are filtered by bulky dc capacitors to maintain the constant dc-link voltage, which results in poor power density and low reliability.
Yunting Liu, Fang Z. Peng
openaire   +1 more source

Capacitor-less 1-transistor DRAM

IEEE International SOI Conference SOI-02, 2002
We review the current status of the 1T-DRAM development, illustrate how this concept can be extended to fully depleted (FD) SOI, and demonstrate a first circuit application. A memory circuit area reduction of 3 to 10 times can be achieved when compared to DRAM or SRAM reference circuits respectively.
null Fazan, null Okhonin, null Nagoga, null Sallese, null Portmann, null Ferrant, null Kayal, null Pastre, null Blagojevic, null Borschberg, null Declercq   +10 more
openaire   +1 more source

Real DC capacitor-less active capacitors

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017
Single-phase pulse width modulation H-bridge active capacitors have second-order harmonic ripple voltages on the DC bus. The second-order harmonic power is usually filtered by a bulk capacitor on the DC bus to maintain a constant dc-bus voltage, which results in low power density. However, in applications like active capacitors, a larger DC bus voltage
Yunting Liu, Fang Zheng Peng
openaire   +1 more source

A new capacitor-less LED drive

2016 13th International Multi-Conference on Systems, Signals & Devices (SSD), 2016
In this paper a new capacitor-less LED drive is proposed. The design is based on the utilization of the internal capacitance of the LED to replace the smoothing capacitor. LED lighting systems usually have many LEDs for better illumination that can reach multiple tens of LEDs. Such configuration can be utilized to enlarge the total internal capacitance
Munir A. Al-Absi, Zainulabideen J. Khalifa, Alaa E. Hussein   +2 more
openaire   +1 more source

A capacitor-less 1T-DRAM cell

IEEE Electron Device Letters, 2002
A simple true 1 transistor dynamic random access memory (DRAM) cell concept is proposed for the first time, using the body charging of partially-depleted SOI devices to store the logic "1" or "0" binary states. This cell is two times smaller in area than the conventional 8F/sup 2/ 1T/1C DRAM cell and the process of its manufacturing does not require ...
S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan   +3 more
openaire   +1 more source

A-RAM: Novel capacitor-less DRAM memory

2009 IEEE International SOI Conference, 2009
A totally different capacitor-less, single-transistor memory cell (1T-DRAM) is proposed and documented. Its novelty comes from the body partitioning in two distinct regions, where electrons and holes are respectively confined. As compared to earlier 1T-DRAMs, the coexistence and coupling of electrons and holes is maintained even in ultrathin fully ...
Noel Rodriguez, Sorin Cristoloveanu, Francisco Gamiz   +2 more
openaire   +1 more source

Output-Capacitor-Less LDO with High PSR

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019
A low-dropout regulator (LDO) with high power supply ripple rejection (PSR) and capacitor-free is presented in this paper. The LDO proposes a PSR enhancement module based on the analysis of the power supply noise transmission path. It uses the Q-reduction circuit to reduce the required on-chip capacitor and the load on the minimum required output.
Yue Zhang, Ningmei Yu, Zhiqiang Jiang, Yuanyuan Wu   +3 more
openaire   +1 more source

A SOI capacitor-less 1T-DRAM concept

2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207), 2002
A simple 1T DRAM cell concept is proposed for the first time. It exploits the body charging of PD SOI devices to store the information. This cell is at least two times smaller in area than the conventional 1T/1C DRAM cell and does not require the integration of a storage capacitor.
S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan   +3 more
openaire   +1 more source

Three-Phase DC Capacitor-Less Solid-State Variable Capacitor

2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020
Grid-connected full bridge inverters typically have a bulky electrolytic dc capacitor to absorb the unbalanced power from the ac side. The electrolytic capacitors are vulnerable and normally have shorter lifetime than other components in the converter.
Yunting Liu, Leon M. Tolbert, Fred Wang, Fang Z. Peng   +3 more
openaire   +1 more source

Inverter-Based Fast Transient Response Capacitor-Less LDO

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019
This paper proposes a fully integrated low dropout regulator (LDO) with fast transient response capability without the need of external off-chip capacitors. Based on the traditional LDO, two inverters are inserted between the gate of the PMOS and the output stage of the error amplifier.
Jiaojin Shi, Jie Tang, Xiuyin Zhang, Weijing Wu, Mingjian Zhao, Mo Huang   +5 more
openaire   +1 more source