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Capacitor-less memory: Advances and challenges
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016Several types of floating-body capacitorless 1TD-RAM memory cells are reviewed and compared. We focus on the recently proposed concepts (MSDRAM, A2RAM and Z2FET), by addressing the device architecture and fabrication, operating mechanisms, and scaling issues.
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A Capacitor-less Low Drop out Voltage Regulator
2010 INTERNATIONAL CONFERENCE ON COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES, 2010Low dropout voltage regulators (LDO) use a large external capacitor, in the range of few micro-farads. These external capacitors occupy valuable board space, increase the IC pin count and prohibit System-On-Chip (SoC) solutions. The large external capacitor is replaced with a reasonable 1nF internal capacitor.
Sunita Shirahatti +2 more
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Inductor-less, capacitor-less state-variable electrothermal filters
IEEE Journal of Solid-State Circuits, 1977Electrothermal circuits (ETC) exploit interactions between thermal and electronic properties of devices in an integrated circuit to perform useful electronic functions. An ETC integrator is described which can be used as a building block for state-variable filters.
W.J. Louw, D.J. Hamilton, W.J. Kerwin
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Capacitor-less D-STATCOM for reactive power compensation
2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG 2018), 2018This paper presents a D-STATCOM for reactive power compensation in a distribution system that uses inductive energy storage element connected to the grid via a matrix converter (MC). The MC is controlled using model predictive controller (MPC) technique. The D-STATCOM will provide load compensation without using electrolytic capacitors.
Wesam Rohouma +3 more
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Novel Capacitor-Less 1T-DRAM Using MSD Effect
2006 IEEE international SOI Conferencee Proceedings, 2006In this paper, we propose a different single-transistor capacitor-less DRAM which is operated at low drain voltage and enables low-power applications. The basic mechanism is the meta-stable dip (MSD) effect recently discovered (Bawedin et al., 2004, 2005). MSD gives rise to a hysteresis in ID(VG) curves and a dip in transconductance gm.
M. Bawedin, S. Cristoloveanu, D. Flandre
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A novel capacitor-less DRAM with raised source structure
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014We proposed a new 1T-DRAM cell with raised source structure. The cell using the raised source region can achieve the characteristics of long gate length one in a limited area and it can suppress short channel effects to improve the gate controllability.
Dai-Rong Lu +7 more
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A fast self-reacting capacitor-less low-dropout regulator
2011 Proceedings of the ESSCIRC (ESSCIRC), 2011A fast self-reacting (FSR) low-dropout (LDO) regulator with triple transient improved loops was implemented in 0.35μm CMOS technology. The proposed regulator for SoC application can achieve high stability for load current from zero to 100mA. The FSR loops can accelerate load transient responses while the regulator achieves the FOM of only 0.00675 (ps ...
Chia-Min Chen, Chung-Chih Hung
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A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks
2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 2019CMOS neuron circuits used to implement neuromorphic chips require extensive circuitry to program the memristive cell, thus eliminating most of the density advantage gained by the adoption of memristive synapses. This paper presents a CMOS neuron circuit that provides a compact and cost-efficient programming interface in which semiconductor capacitors ...
H. Aziza +4 more
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TCAD Analysis of III-V capacitor-less A2RAM cells
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 20192D-TCAD simulations are conducted on III-V materials to demonstrate the feasibility of implementing A2RAM cells using non-silicon substrates. InGaAs-OI is selected based on its reduced band-gap and improved mobility. Results demonstrate valid memory behavior, further scaling perspectives than other 1T -DRAM cells and limited impact of supercoupling ...
Carlos Navarro +3 more
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Low Drop-Out Voltage Regulators: Capacitor-less Architecture Comparison
IEEE Circuits and Systems Magazine, 2014Demand for system-on-chip solutions has increased the interest in low drop-out (LDO) voltage regulators which do not require a bulky off-chip capacitor to achieve stability, also called capacitor-less LDO (CL-LDO) regulators. Several architectures have been proposed; however comparing these reported architectures proves difficult, as each has a ...
Joselyn Torres +6 more
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