Results 151 to 160 of about 7,920 (210)
Tuning the spontaneous emission of CdTe quantum dots with hybrid silicon-gold nanogaps. [PDF]
Al-Hamadani A +8 more
europepmc +1 more source
Magnetic Nanoparticle Capture and Quantum Dot Labeling for Rapid and Quantitative Detection of Methicillin-Resistant <i>Staphylococcus aureus</i>. [PDF]
Satheesan N +3 more
europepmc +1 more source
Advancing Bioconjugated Quantum Dots with Click Chemistry and Artificial Intelligence to Image and Treat Glioblastoma. [PDF]
Kalaga P, Ray SK.
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness
Solar Energy Materials and Solar Cells, 2007Abstract CdTe-based solar cells have long been of interest for terrestrial usage because of their high potential conversion efficiency (in the range of 18–24%) with low-cost manufacturability and concern over environmental effects. In order to conserve material and address environmental pollution concerns as well as to reduce carrier recombination ...
Nowshad Amin, Sopian K
exaly +2 more sources
Photosensitive Centers in CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉
Inorganic Materials, 2003The spectral and temperature dependences of photoconductivity in CdTe〈Pb〉 crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of the crystals and the observed IR and temperature quenching of photoconductivity indicate that, just as in CdTe ...
P. N. Gorlei +5 more
openaire +1 more source
CdTe photoluminescence in HgTe-CdTe superlattices
Journal of Applied Physics, 1987We report photoluminescence in HgTe-CdTe superlattices that originates in the CdTe layers. We see a near-band-gap line at 1.493 eV, which demonstrates that strain and Hg-Cd substitutional diffusion are small in the CdTe layers. In addition, a deep-level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
Bernard J. Feldman +2 more
openaire +1 more source
Cathodoluminescence of HgCdTe and CdTe on CdTe and sapphire
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985The imaging cathodoluminescence capability of a scanning electron microscope (SEM) was complemented by etch pit (EP) measurements and secondary ion mass spectroscopy (SIMS) to characterize structures of HgCdTe LPE grown both on CdTe and CdTe/sapphire (PACE-1) (Ref. 1: W. E. Tennant, IEDM Technical Digest 1983, 704) substrates.
L. O. Bubulac +4 more
openaire +1 more source
Growth and Characterization of CDTE and CDTE Alloys
MRS Proceedings, 1989ABSTRACTMethods used to grow bulk, CdTe crystals, effects of alloying on their perfection and typical single crystal properties are reviewed in this paper. Crystals grown by a modified horizontal Bridgman technique have lower dislocation densities than those grown by a modified vertical Bridgman method.
S. Mcdevitt +6 more
openaire +1 more source
2022
?????????????????? ???????????????????? ?????????????????????????????? ???????????????????????? CdTe-???????????????????? ?? ?????????????????? ???????????? HCl???NaCl ?? NaOH???NaCl ?? ???????????????????????? ?? ???????????????????????? ???????????????????????????????????? ?????????????? ?????????????? CdTe??????????. ???????????????????? ????????????
openaire +4 more sources
?????????????????? ???????????????????? ?????????????????????????????? ???????????????????????? CdTe-???????????????????? ?? ?????????????????? ???????????? HCl???NaCl ?? NaOH???NaCl ?? ???????????????????????? ?? ???????????????????????? ???????????????????????????????????? ?????????????? ?????????????? CdTe??????????. ???????????????????? ????????????
openaire +4 more sources
1963
Abstract : A final addition is given to the experimental study of the band edge of CdTe. This consists of an attempt to obtain the best possible fit of the CdTe data with the theory of indirect interband and indirect exciton absorption. The failure of this theory to account for the data is examined in detail.
R.E. HALSTED, B. SEGALL, M.R. LORENZ
openaire +1 more source
Abstract : A final addition is given to the experimental study of the band edge of CdTe. This consists of an attempt to obtain the best possible fit of the CdTe data with the theory of indirect interband and indirect exciton absorption. The failure of this theory to account for the data is examined in detail.
R.E. HALSTED, B. SEGALL, M.R. LORENZ
openaire +1 more source

