Results 161 to 170 of about 7,920 (210)

?????????????? ?????????????? ?????????? ???? ?????????????????????????????????? ???????????????? ???????????????????????????? ???????????? CdTe

2016
?????????????????????? ???????????????????? ?????????????????????? ???????????????? ?????????? ?????????????????????????????????????? ???????????? CdTe ?? ???????????????????? ?????????????????????????????????? (??????) ??????????????????, ?????????????????????? ?????????????????? ???????????????????????????? ???? ??????????????, ?? ?????? ?????????????
  +7 more sources

Structure of the CdTe/Cd0.959Zn0.041Te, Hg1−xCdxTe/CdTe, CdTe/GaAs heterojunctions

Journal of Crystal Growth, 1999
Abstract The strain tensor elements for an anisotropically relaxed CdTe epilayer at a low-symmetry (1 1 2) surface grown by molecular beam epitaxy (MBE) on the Cd 0.959 Zn 0.041 Te(1 1 2)B substrate were determined by X-ray double crystal diffraction (XDCD). It was obtained that the strain tensor elements are e xx =2.5×10 −3 , e zz =2.6×10 −3
openaire   +1 more source

Nonlinear piezoelectricity in CdTe

Physical Review B, 1993
Nonlinear piezoelectricity has recently been detected in strained-layer superlattices where CdTe is pseudomorphically grown along (111) on different materials. We investigate this problem from first principles using density-functional theory. As a byproduct, we provide the ab initio calculation of several properties of this material, including the ...
Dal Corso,A, Resta, R., Baroni, S.
openaire   +2 more sources

Thin-film CdTe cells: Reducing the CdTe

Thin Solid Films, 2011
Abstract Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices.
V. Plotnikov, X. Liu, N. Paudel, D. Kwon, K.A. Wieland, A.D. Compaan   +5 more
openaire   +1 more source

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

Semiconductors, 2008
CdTe/Hg1 − xCdxTe heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg1 − xCdxTe film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy.
I. S. Virt, I. V. Kurilo, I. A. Rudyĭ, F. F. Sizov, N. N. Mikhaĭlov, R. N. Smirnov   +5 more
openaire   +1 more source

Growth and characterization of CdTe films on CdTe crystals

Journal of Crystal Growth, 1983
Abstract The deposition of cadmium telluride films on cadmium telluride substrates by closed-tube chemical vapour deposition was investigated. Gaseous hydrochloric acid, obtained by thermal dissociation of ammonium chloride, was used as transporting agent.
A.M. Mancini, P. Pierini, A. Quirini, A. Rizzo, L. Vasanelli   +4 more
openaire   +1 more source

Chemical bevelling of CdTe and CdTe/MnTe structures

Materials Science and Engineering: B, 1998
Abstract We have developed an etching procedure based on 0.5 N-K 2 Cr 2 O 7 /H 2 SO 4 that enables the preparation of bevels with smooth surface and good profile linearity through CdTe and CdTe/MnTe structures. The bevel angles obtained are in the range of 10 −5 rad.
R Srnanek, A Bonanni, H Sitter, J Liday, I Novotny   +4 more
openaire   +1 more source

Extinction and luminescence coefficients of CdSe/CdTe, CdTe/CdSe, and CdTe/CdS heterostructures based on colloidal CdSe and CdTe nanocrystals

Journal of Optical Technology, 2011
This paper discusses the optical properties of colloidal CdSe/CdTe, CdTe/CdSe, and CdTe/CdS heterostructures synthesized by growing a shell on CdSe and CdTe nanocrystals. The extinction coefficients of the first exciton absorption band and the extinction coefficients at 400 nm are determined as a function of the amount of shell material added during ...
D. N. Dirin, M. S. Sokolikova, A. M. Gaskov, R. B. Vasilev   +3 more
openaire   +1 more source

In Doping in CdTe Film by Co-Evaporation of CdTe and In

Japanese Journal of Applied Physics, 1987
High-dark-conductivity CdTe films have been prepared by co-evaporation of CdTe and In. The conductivity of the films prepared in this study ranged from 10-8 to 103 Scm-1. The film structure was of the zinc-blende type with a preferential orientation of the (111) planes parallel to the substrate. Analyzing the film structure by X-ray analysis, it was
Tatsuro Suzuki, Yoshinori Ema, Toshiya Hayashi   +2 more
openaire   +1 more source

Shallow donors in CdTe

Physical Review B, 1990
Photoluminescence and high-resolution selective excitation of luminescence have been used to study shallow donors in non-intentionally-doped Te-rich or nearly stoichiometric CdTe crystals and their evolution after controlled thermal annealings (specifically under Cd overpressure). It has been shown that there are at least six native donors. For each of
, Francou, , Saminadayar, , Pautrat
openaire   +2 more sources