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A model of photogalvanic centers in crystals

Ferroelectrics, 1982
A photogalvanic complex consisting of two neighboring point defects is considered. One of them is a substitution impurity and is described by Lucovsky potential, the second is a Coulomb center (a compensating impurity or vacancy). The contribution of an individual complex to the photogalvanic tensor βijk and the absorption coefficient α has been found.
V. V. Obukhovsky, A. V. Stoyanov
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Trapping center parameters of TlGaSe2 layered crystals

Physica B: Condensed Matter, 2004
Abstract Thermally stimulated current measurements are carried out on as-grown TlGaSe 2 layered single crystals in the temperature range of 90–220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV.
N.S. Yuksek   +3 more
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Surface characterization of face-centered cubic crystals

Mechanics of Materials, 2019
Abstract To date, the examination of surface energy and surface layer relaxation has been the subject of several experimental and simulation works, whereas evaluation of surface residual stresses and surface elastic constants has received very little attention. In addition to the fundamental importance of these properties in the understanding of such
H.M. Shodja, C. Enzevaee
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Spectroscopy of defect centers in LaGaO3 crystals

Journal of Alloys and Compounds, 2001
Abstract It is shown that the process of thermal relaxation of the photochromic effect in LaGaO 3 crystals proceeds due to transfer of the charges between defects involved in the effect and shallow traps. The crystals exhibit luminescence of Cr 3+ ions, which are an unintentional dopant.
A Durygin   +3 more
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Crystallization mechanisms of cordierite glass-ceramics with “surface-center” crystallization behavior

Journal of the European Ceramic Society, 2021
Abstract Cordierite glass-ceramics usually begin to crystallize from the surface. As an efficient nucleating agent, TiO2 can promote the rapid transformation of glass to bulk crystallization, but it is easy to cause the increase of dielectric constant and light absorption.
Wei Yu   +6 more
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Investigation of hole centers in KDP crystals

Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715), 2004
The magnetic and optical properties of two types of hole centers formed in KDP (KH/sub 2/PO/sub 4/) under irradiation and variation of their concentration at thermal, laser and radiation annealing of crystals have been investigated by means of ESR and optical spectroscopy methods. It has been found that wide bands of optical absorption in the UV region
A.N. Levchenko   +5 more
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Photoconductivity of CsBr Crystals Containing Color Centers

Journal of the Physical Society of Japan, 1963
The spectral distribution of photoconductivity has been investigated at liquid nitrogen and liquid helium temperatures both on additively colored and X-rayed CsBr. A peak is always found on the long wavelength side of the F band in the spectral distribution curve of ηω. Absorption bands which are located at 400 and 490 mµ at liquid nitrogen temperature
Takehiko Ishii, Masayasu Ueta
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Annealing of Eu2+ Centers in CdF2 Crystals

physica status solidi (a), 1990
Thermostimulated recombination processes in CdF2: Eu crystals are studied by means of the fractional thermostimulated luminescence technique (FTSL) and phosphorescence spectra for direct photoexcitation of Eu3+ impurity. The attribution of the measured TSL peaks and the connection between the thermostimulated recombination processes and the thermal ...
S. Benci, F. Fermi, A. A. Nagornyi
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Radioluminescence of color centers in LiF crystals

Radiation Measurements, 2013
Abstract Luminescence of color centers in the near-infrared region under cathode beam excitation is revealed for the first time in as-grown pure LiF and LiF:Mg,O crystals. Emission efficiency of F 2 + , F 3 − and F 2 − centers is higher for the samples enriched by oxygen and magnesium than for ultrapure crystals. The
Shiran, N.   +4 more
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Paraelectric behavior of OH--dipole centers in KCl crystals

Solid State Communications, 1964
Abstract OH- centers in KcL are shown to be oriented with their dipole axes in the six degenerate (100) directions of the crystal. High electric fields cause redistributions among these six orientations and can lead at low temperatures to a complete alignment of the diluted dipole system.
U. Kuhn, F. Lüty
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