Results 121 to 130 of about 51,131 (290)

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

Advanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu, Ryan Thompson, C. Willem Rischau, Marli R. Cantarino, Premysl Marsik, Sergey L. Bud'ko, Neven Biškup, María Varela, Yurii G. Pashkevich, Serhii M. Orel, Thomas Prokscha, Andreas Suter, Jiangtao Zhao, Ugwumsinachi Oji, Marco Bonura, Peter Bencok, Zaher Salman, Stefano Gariglio, Christian Bernhard, Subhrangsu Sarkar   +19 more
wiley   +1 more source

A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection

Advanced Materials, EarlyView.
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing, Anubhab Tripathi, Si En Ng, Natalia Yantara, Yue Gong, Qinjie Wu, Yeow Boon Tay, Wen Siang Lew, Yang Chai, Arindam Basu, Nripan Mathews   +10 more
wiley   +1 more source

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Nature Communications, 2019
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge.
Sandip Mondal, V. Venkataraman
doaj   +1 more source

Plasmonic Nanomachines: Creating Local Potential Gradients and Motions

Advanced Materials, EarlyView.
Plasmonic nanomachines can generate optical, thermal, and chemical potential gradients to drive directional rectilinear, rotational, and twisting motions at the nanometer scale. The integration of multimodal plasmonic forces with functional materials and programmed structural distortions enables precise spatiotemporal actuation, thereby providing a ...
Yoonhee Kim, Soohyun Ji, Donghyun Choi, Jwa‐Min Nam   +3 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

Advanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim, Sung Kyu Jang, Jihun Kim, Jong‐Hyun Choi, Ji‐Beom Yoo, Hyun‐Mi Kim, Seul‐Gi Kim, Hyeongkeun Kim   +7 more
wiley   +1 more source

A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memory in the FN-Tunneling Regime

IEEE Journal of the Electron Devices Society
We introduce a compact model for characterizing the transient program operation of Gate-All-Around (GAA) Barrier-Engineered charge-trapping NAND flash (BE-CTNF) memory, especially in the FN-tunneling regime.
Haechan Choi, Hyungcheol Shin
doaj   +1 more source

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, EarlyView.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer

Applied Sciences
In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-trapping layer is ...
Wenting Zhang, Junliang Shang, Shuang Li, Hu Liu, Mengqi Ma, Dongping Ma   +5 more
doaj   +1 more source

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

Advanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang, Senlin Gu, Jianyang Zhao, Xiaojuan Hao, Lu Hua Li, Jihua Li, Lingxue Kong   +6 more
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source