Results 101 to 110 of about 51,131 (290)

Low interface state density and large capacitive memory window using RF sputtered NiO nanoparticles decorated MgZnO thin film

Scientific Reports
NiO nanoparticles (NPs) synthesized using glancing angle deposition (GLAD) technique over MgZnO thin film was used to design a novel memory device. The NiO NPs with average diameter ~ 9.5 nm was uniformly distributed over the MgZnO thin film surface. The
Mritunjay Kumar, Jay Chandra Dhar
doaj   +1 more source

Retention Enhancement in Low Power NOR Flash Array with High-κ-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide. [PDF]

Micromachines (Basel), 2021
Song YS, Park BG.
europepmc   +1 more source

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Optoelectrical Devices for Neural Interfacing: Engineering Integration, Stability, and Multimodal Sensing

Advanced Healthcare Materials, EarlyView.
Implantable optoelectrical devices are an effective resource for the modulation and monitoring of neural activity with high spatiotemporal resolution. This review discusses current challenges faced by these devices and outlines future perspectives for the development of next‐generation neural interfaces targeting chronic, multisite, and multimodal ...
Stella Aslanoglou, Barbara Spagnolo, Antonio Balena, Massimo De Vittorio, Ferruccio Pisanello   +4 more
wiley   +1 more source

Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

, 2011
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors.
Citro, Roberta, Di Bartolomeo, Antonio, Giubileo, Filippo, Lupina, And Grzegorz, Romeo, Francesco, Santandrea, Salvatore, Schroeder, Thomas   +6 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Dynamic Notch Pinning Fields for Domain Walls in Ferromagnetic Nanowires [PDF]

, 2010
Artificial defects such as notches and antinotches are often attached to magnetic nanowires to serve as trapping (pinning) sites for domain walls. The magnetic field necessary to release (depin) the trapped domain wall from the notch depends on the type,
Kunz, Andrew, Priem, Jonathan D.
core   +1 more source

Simultaneous electric and magnetic field induced nonvolatile memory

, 2005
We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence.
Levy, P., Leyva, A. G., Quintero, M.
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source