Results 81 to 90 of about 51,131 (290)

A single photoelectron transistor for quantum optical communications [PDF]

, 2002
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be
Bandaru, Prabhakar, Kosaka, Hideo, Makita, Kikuo, Rao, Deepak S., Robinson, Hans D., Yablonovitch, Eli   +5 more
core   +3 more sources

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

Solution‐Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating‐Gates for High‐Efficiency Ambipolar Charge Trapping Memory

Advanced Electronic Materials
The molecular floating‐gate transistor memories are fabricated by a simple spinning‐coating method using a small‐molecule material spiro[fluorene‐9,7′‐dibenzo[c,h]acridine]‐5′‐one (SFDBAO) as the trapping element.
Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling   +8 more
doaj   +1 more source

Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

Scientific Reports, 2017
The charge-trapping memory devices with a structure Pt/Al2O3/(Ta2O5) x (TiO2) 1−x /Al2O3/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques.
C. Y. Wei, B. Shen, P. Ding, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu   +8 more
doaj   +1 more source

Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs

APL Materials, 2023
The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K.
H. S. Alagoz, M. Egilmez, J. Jung, K. H. Chow   +3 more
doaj   +1 more source

Efficiency of energy funneling in the photosystem II supercomplex of higher plants

, 2015
The investigation of energy transfer properties in photosynthetic multi-protein networks gives insight into their underlying design principles.Here, we discuss excitonic energy transfer mechanisms of the photosystem II (PS-II) C$_2$S$_2$M$_2 ...
Aspuru-Guzik, Alán, Kreisbeck, Christoph   +1 more
core   +2 more sources

Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information [PDF]

, 2014
The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation.
Chen, Tsung-Yi, Wesel, Richard D., Williamson, Adam R.   +2 more
core   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Hysteresis of Electronic Transport in Graphene Transistors

, 2010
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range.
Adam S., Ando T., Booth T. J., Castro Neto A. H., Chen F., Cho S., Chunxiao Cong, Cui J. B., Dan Y., Farmer D. B., Fuhrer M. S., Geim A. K., Geringer V., Guinea F., Haomin Wang, Jang C., Jingzhi Shang, Joshi P., Katsnelson M. I., Kim K., Kim W., Lafkioti M., Leenaerts O., Leenaerts O., Li X., Liao Z., Lohmann T., Martin J., Meyer J. C., Meyer J. C., Moser J., Moser J., Novoselove K. S., Radosavljevi M., Sabio J., Sabri S. S., Sadowski M. L., Schedin F., Tan Y. W., Ting Yu, Unarunotai S., Wang H. M., Wang H. M., Yan J., Yan J., Yihong Wu, Yoo J. S., Zhang L., Zheng Y.   +48 more
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source