Results 61 to 70 of about 51,131 (290)
Advanced Functional Materials, EarlyView.In this strategy, a conductive nano‐probe is employed to induce nanoscale phase transitions and map the nanoscale conductivity and trap density of GST films. By utilizing the contrasting properties of phase‐change states, nano‐resonators are fabricated that exhibit plasmonic conduction and dramatically different transport characteristics.
Sunwoo Bang +4 more
wiley +1 more source
Dielectric breakdown II: Related projects at the University of Twente [PDF]
, 1996 In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices ...
Bijlsma, S. +3 more
core +2 more sources
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Advanced Functional Materials, EarlyView.Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
Advanced Functional Materials, EarlyView.We have developed DEX/GM, an all‐natural, personalizable hybrid vaccine designed by coating dendritic cell‐derived exosomes (DEX) onto tumor cell membranes (GM) for sustained prophylaxis against glioblastoma (GBM). ABSTRACT Glioblastoma (GBM), one of the most aggressive and lethal brain tumors, remains incurable with a poor clinical prognosis.
Shanshan Li +6 more
wiley +1 more source
Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon [PDF]
, 2015 Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming.
Baxter R. J. +5 more
core +4 more sources
Advanced Functional Materials, EarlyView.Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications [PDF]
, 2013 BaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and ...
Huang, X, Lai, PT
core +1 more source
Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures
Advanced Functional Materials, EarlyView.Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne +17 more
wiley +1 more source
, 2008 In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A. +12 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav +6 more
wiley +1 more source