Results 51 to 60 of about 51,131 (290)
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Employing flash memories that function as the analogue synapse cleft for implementation of neural systems is a popular approach. For practical application in synapse mimicking, ambipolar trapping of both holes and electrons enables the weight updated ...
Xiaoli Chen +9 more
doaj +1 more source
Effect of Charge Retention of Non-Volatile Memory TFTs Under Multiple Read Cycles
A hydrogenated amorphous silicon thin-film transistor with an engineered charge-trapping interface between the gate dielectric and the channel layer is fabricated to realize non-volatile memory. The memory devices possessed a large memory window and good
Sunil Sanjeevi +4 more
doaj +1 more source
Intramolecular alkyne aromatization is a powerful tool that enables the synthesis of nonplanar polycyclic aromatic hydrocarbons. Herein, an unexpected intramolecular alkyne aromatization via a trifluoroacetic acid‐promoted cyclization is described, in ...
Yang Yu +5 more
doaj +1 more source
Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode [PDF]
A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode.
Chen, TP +4 more
core +1 more source
Research on charge trapping memory’s over erase
In this paper, charge trapping memory (CTM) is studied for analyzing the over-erase phenomenon, based on the first principles and VASP package. The nitrogen vacancy (VN) in Si3N4 and the interstitial oxygen (IO) in HfO2 are selected as model, because of the formation energy.
null Wang Jia-Yu +6 more
openaire +1 more source
ZnO based charge trapping memory with embedded nanoparticles [PDF]
A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the V t shift due to the nanoparticles for the same operating voltage. In addition a ∼6V reduction in the programming voltage is obtained due the nanoparticles.
Rizk, A. +3 more
openaire +2 more sources
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich +6 more
wiley +1 more source
Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application
In this work, a synaptic device for neuromorphic system is proposed and designed to emulate the biological behaviors in the novel device structure of core-shell dual-gate (CSDG) nanowire flash memory.
Md. Hasan Raza Ansari +3 more
doaj +1 more source
Hybrid Quantum Processors: molecular ensembles as quantum memory for solid state circuits [PDF]
We investigate a hybrid quantum circuit where ensembles of cold polar molecules serve as long-lived quantum memories and optical interfaces for solid state quantum processors.
DeMille, D. +5 more
core +3 more sources

