Results 41 to 50 of about 51,131 (290)

Imaging Fermi-level hysteresis in nanoscale bubbles of few-layer MoS2

Communications Materials, 2023
The electrical stability and reliability of two-dimensional (2D) crystal-based devices are mainly determined by charge traps in the device defects. Although nanobubble structures as defect sources in 2D materials strongly affect the device performance ...
Dohyeon Jeon, Haesol Kim, Minji Gu, Taekyeong Kim   +3 more
doaj   +1 more source

Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications [PDF]

, 2011
Charge-trapping characteristics of SrTiO 3 with and without nitrogen incorporation were investigated based on Al/ Al 2 O 3/SrTiO 3/SiO 2 /Si (MONOS) capacitors.
Huang, XD, Lai, PT, Liu, L, Xu, JP
core   +1 more source

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Nature Communications, 2021
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu   +12 more
doaj   +1 more source

Enhanced memory effect with embedded graphene nanoplatelets in znO charge trapping layer [PDF]

, 2014
Cataloged from PDF version of article.A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated.
Alkis, S., Cimen, F., El Atab, B., Nayfeh, A., Okyay, A. K.   +4 more
core   +1 more source

From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport

Advanced Electronic Materials, 2020
Write‐once‐read‐many (WORM) memory behavior is often observed in polymer electret memory (PEM) devices, greatly limiting their overall performance. This paper systematically investigates the device physics of PEM devices with poly(α‐methylstyrene) as a ...
Waner He, Wenchao Xu, Huixin He, Xiaosai Jing, Chuan Liu, Jiajun Feng, Chunlai Luo, Zhen Fan, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu, Junming Liu   +12 more
doaj   +1 more source

Advancements in Complementary Metal-Oxide Semiconductor-Compatible Tunnel Barrier Engineered Charge-Trapping Synaptic Transistors for Bio-Inspired Neural Networks in Harsh Environments

Biomimetics, 2023
This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures.
Dong-Hee Lee, Hamin Park, Won-Ju Cho
doaj   +1 more source

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Nature Communications, 2017
Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.
Juwon Lee, Sangyeon Pak, Young-Woo Lee, Yuljae Cho, John Hong, Paul Giraud, Hyeon Suk Shin, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha, Jong Min Kim   +10 more
doaj   +1 more source

Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units [PDF]

, 2017
We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm ...
Alibart, F., Blanchard, P., Guerin, D., Lenfant, S., Lmimouni, K., Ocafrain, M., Roncali, J., Vuillaume, D., Yassin, A., Zhang, T.   +9 more
core   +4 more sources

Tribological Performance of 60NiTi Alloy Under Varying Contact Conditions and Elevated Temperatures in Linear Reciprocating Sliding

Advanced Engineering Materials, EarlyView.
This study investigates the tribological response of 60NiTi alloy under dry, water‐lubricated and high‐temperature conditions. The alloy exhibits decreasing wear volume and friction with increasing temperature due to the formation of protective oxide layers. The work clarifies dominant wear mechanisms and demonstrates the suitability of 60NiTi for high‐
Anthony Onyebuchi Okoani, Miguel Angel Selles, Maziar Ramezani   +2 more
wiley   +1 more source

Ga2O3(Gd2O3) as Charge-Trapping Layer for Nonvolatile Memory Applications [PDF]

, 2013
published_or_final_versio
Huang, X, Lai, PT, Sin, JKO
core   +2 more sources