Results 21 to 30 of about 51,131 (290)
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer [PDF]
, 2014 Cataloged from PDF version of article.In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated.
Alevli, M. +7 more
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Nitrided GdTiO as charge-trapping layer for flash memory applications [PDF]
, 2012 Based on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher ...
Lai, PT, Tao, Q
core +1 more source
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications [PDF]
, 2015 The charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3/SiO2/Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible ...
Huang, XD, Lai, PT
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Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories
Advanced Electronic Materials, 2023 Finding the outperforming photoactive charge trapping materials for a new‐trending transistor photomemory application is labor intensive, costly reagents and solvents, and not to mention, inefficient energy and time consumption.
Suhendro Purbo Prakoso +3 more
doaj +1 more source
Nanoscale Research Letters, 2017 In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu +11 more
doaj +1 more source
Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO2
IEEE Journal of the Electron Devices Society, 2021 In this work, we improved the performance of germanium (Ge) channel Charge Trapping MemTransistors (CTMTs) as synaptic device by using Ti-doped HfO2 as charge trapping layer (CTL). We manipulated the amount of Ti dopant within the HfO2 CTL to perform the
Yu-Che Chou +4 more
doaj +1 more source
Thin-film ZnO charge-trapping memory cell grown in a single ALD step [PDF]
, 2012 Cataloged from PDF version of article.A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the
Cimen, F. +5 more
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IEEE Journal of the Electron Devices Society, 2018 Metal/ferroelectric-Si:HfO2/SiN/SiO2/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO2:HfO2 layer.
Hao Ji +3 more
doaj +1 more source
Nanomaterials, 2023 A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and ...
Jianjian Wang +5 more
doaj +1 more source
Zn-doped Zr oxynitride as charge-trapping layer for flash memory applications [PDF]
, 2013 In this work, we proposed Zn-doped Zr oxynitride (ZrZnON) as a new charge-trapping layer for flash memory applications and investigated its memory characteristics based on the capacitor structure of Al/Al2O3/ZrZnON/SiO2/Si.
Lai, PT, Tao, Q
core +1 more source