Results 11 to 20 of about 51,131 (290)
Advanced Science, 2017 Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li +8 more
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Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window
IEEE Journal of the Electron Devices Society, 2022 The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers.
Ning Zhang +6 more
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Magnetoelectric Charge Trap Memory [PDF]
Nano Letters, 2012 It is demonstrated that a charge-trapping layer placed in proximity to a ferromagnetic metal enables efficient electrical and optical control of the metal's magnetic properties. Retention of charge trapped inside the charge-trapping layer provides nonvolatility to the magnetoelectric effect and enhances its efficiency by an order of magnitude. As such,
Uwe, Bauer +3 more
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Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure
Advanced Science, 2021 Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge‐trapping capability depends on localized electronic states that ...
Jialing Wen +10 more
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Electronics Letters, 2021 A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low ...
Zhaohao Zhang +7 more
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Trapped Charge Distribution in Nitride-Based Charge Trapping Memory Devices [PDF]
ECS Meeting Abstracts, 2010 Abstract not Available.
Jang-Sik Lee, Hyun Suk Jung
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Nanomaterials, 2023 Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the ...
Jae-Hoon Yoo +7 more
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Materials & Design, 2020 Imitation of memory and learning behaviors of nervous system by nanoscale photoelectric devices is highly desirable for building neuromorphic systems or even artificial neural networks.
Zhiliang Chen +8 more
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Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films [PDF]
, 2011 The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO 2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy.
Huang, XD, Lai, PT, Liu, L, Xu, JP
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Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories
Advanced Electronic Materials, 2023 The development of field‐effect transistor‐based (FET‐based) non‐volatile optoelectronic memories is vital toward innovations necessary to improve computer systems.
Mahima Chaudhary +8 more
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