Results 1 to 10 of about 51,131 (290)

Silicon nanoparticle charge trapping memory cell [PDF]

physica status solidi (RRL) – Rapid Research Letters, 2014
Cataloged from PDF version of article.A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and
Alkis, S., El Atab, N., Nayfeh, A., Okyay, A. K., Ozcan, A.   +4 more
core   +7 more sources

Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer [PDF]

Scientific Reports, 2023
There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent ...
Ayman Rezk, Md. Hasan Raza Ansari, Kayaramkodath Chandran Ranjeesh, Safa Gaber, Dayanand Kumar, Areej Merhi, Bilal R. Kaafarani, Mohamed Ben Hassine, Nazek El-Atab, Dinesh Shetty, Ammar Nayfeh   +10 more
doaj   +2 more sources

Charge Trap Memory Based on Few-Layered Black Phosphorus [PDF]

Nanoscale, 2015
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible ...
Feng, Qi, Luo, Wengang, Wang?, Kaiyou, Yan, Faguang   +3 more
core   +3 more sources

Photo-reactive charge trapping memory based on lanthanide complex. [PDF]

Sci Rep, 2015
AbstractTraditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges.
Zhuang J, Lo WS, Zhou L, Sun QJ, Chan CF, Zhou Y, Han ST, Yan Y, Wong WT, Wong KL, Roy VA.   +10 more
europepmc   +6 more sources

Tunable charge-trap memory based on few-layer MoS2 [PDF]

ACS Nano, 2014
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their
Jin, Yibo, Sun, Qingqing, Wang, Weiyi, Xiu, Faxian, Zhan, David Wei, Zhang, Cheng, Zhang, Enze, Zhou, Peng, Zhu, Guodong   +8 more
core   +3 more sources

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices [PDF]

Nano-Micro Letters
Highlights Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 108 s under low-voltage operation.
Eun Bee Ko, Junho Sung, Seon Yeon Choi, Yasir Hassan, Jeong-Ju Bae, Jongseok Kim, Hyun You Kim, Eunho Lee, Min Sup Choi, Hyun Ho Kim   +9 more
doaj   +2 more sources

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors [PDF]

Nature Communications
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li, Weixin He, Ruixue Wang, Chi Zhang, Hongmiao Zhou, Yu Liu, Yijia Yuan, Kian Ping Loh, Junhao Chu, Wenwu Li   +9 more
doaj   +2 more sources

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

IEEE Journal of the Electron Devices Society, 2018
The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric.
Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang
doaj   +2 more sources

High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements [PDF]

Nanomaterials
Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated.
Lingzhi Jin, Wenjuan Xu, Yangzhou Qian, Tao Ji, Kefan Wu, Liang Huang, Feng Chen, Nanchang Huang, Shu Xing, Zhen Shao, Wen Li, Yuyu Liu, Linghai Xie   +12 more
doaj   +2 more sources

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO₂/Al₂O₃ Nanolaminated Stacks

Nanomaterials, 2023
The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells ...
Dencho Spassov, Albena Paskaleva
doaj   +1 more source