Results 31 to 40 of about 51,131 (290)

High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric [PDF]

, 2008
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer ...
Johansson, Andreas, Kauppinen, Esko I., Nasibulin, Albert G., Rinkiö, Marcus, Toppari, J. Jussi, Törmä, Päivi, Zavodchikova, Marina Y.   +6 more
core   +4 more sources

Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials, 2018
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants.
Jer Chyi Wang, Chyuan Haur Kao, Chien Hung Wu, Chun Fu Lin, Chih Ju Lin   +4 more
doaj   +1 more source

LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications [PDF]

, 2012
Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al 2O 3/LaTiON-LaON/SiO 2/Si (band-engineered MONOS) capacitors.
Huang, XD, Lai, PT, Sin, JKO
core   +1 more source

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied.
V.A. Ievtukh
doaj   +1 more source

HfON/LaON as charge-trapping layer for nonvolatile memory applications [PDF]

, 2012
The charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/ SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and
Huang, X, Lai, PT
core   +1 more source

Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications [PDF]

, 2012
Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors.
Huang, XD, Lai, PT, Sin, JKO
core   +2 more sources

Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

AIP Advances, 2013
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps.
Nazek El-Atab, Ayman Rizk, Ali K. Okyay, Ammar Nayfeh   +3 more
doaj   +1 more source

Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Scientific Reports, 2023
Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the ...
Tianpeng Yu, Zhenliang Liu, Yiru Wang, Lunqiang Zhang, Shuyi Hou, Zuteng Wan, Jiang Yin, Xu Gao, Lei Wu, Yidong Xia, Zhiguo Liu   +10 more
doaj   +1 more source

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si₃N₄)

Nanomaterials, 2023
Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is ...
Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, Diego Milardovich, Michael Waltl, Tibor Grasser   +5 more
doaj   +1 more source

Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes [PDF]

, 2011
Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface.
Bory, Benjamin F., Chen, Q., De Leeuw, Dago M., Gomes, Henrique L., Kiazadeh, Asal, Meskers, S. C. J., Rocha, Paulo R. F., Verbakel, F.   +7 more
core   +2 more sources