Results 71 to 80 of about 51,131 (290)

EDACs and test integration strategies for NAND flash memories [PDF]

, 2010
Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Michele Fabiano, Michele Fabiano, Paolo Prinetto, Paolo Prinetto, Politecnico Di Torino, Roberto Piazza, Roberto Piazza, Stefano Di Carlo, Stefano Di Carlo   +8 more
core   +2 more sources

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

AIP Advances, 2015
The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-
W. Lu, C. Y. Wei, K. Jiang, J. Q. Liu, J. X. Lu, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu   +10 more
doaj   +1 more source

Nanoislands-Based Charge Trapping Memory: A Scalability Study [PDF]

IEEE Transactions on Nanotechnology, 2017
Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nanoislands charge trapping layer.
Elatab, Nazek, Saadat, Irfan, Saraswat, Krishna, Nayfeh, Ammar   +3 more
openaire   +2 more sources

Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?

Advanced Functional Materials, EarlyView.
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee, Yunseo Kim, Hyeong‐ku Jo, Dongjoon Yoon, Byeonghyeok Im, WonJeong Yu, Eui‐Rim On, Changhwan Lee   +7 more
wiley   +1 more source

Cavity QED in a molecular ion trap

, 2009
We propose an approach for studying quantum information and performing high resolution spectroscopy of rotational states of trapped molecular ions using an on-chip superconducting microwave resonator.
B. Sauer, D. DeMille, D. I. Schuster, D. Walls, H. J. Carmichael, I. L. Chuang, J. Chiaverini, K. P. Huber, Lev S. Bishop, R. J. Schoelkopf, R. Sinclair   +10 more
core   +1 more source

Establishing a Model Precursor System: Over a Decade of Research on Carbon Dots from the Citric Acid‐Urea System

Advanced Functional Materials, EarlyView.
The citric acid/urea (CA‐Urea) precursor system offers a versatile, scalable route to carbon dots with tunable luminescence and multifunctionality. Mechanistic insights into precursor chemistry and reaction parameters have enabled doping, surface modification, and hybridization strategies, yielding CDs for luminescent devices, sensing, catalysis ...
Yupeng Liu, Zhiqi Cai, Xiangxin Sun, Hanyi Zhang, Yiming Hao, Jun Wu, Zekun Yan, Xue Wu, Yiqi Liang, Liming Wang, Songnan Qu   +10 more
wiley   +1 more source

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

APL Materials
HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge.
Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao   +8 more
doaj   +1 more source

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

IEEE Journal of the Electron Devices Society, 2018
Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO2/ZHO/SiO2/Si and Pd/SiO2/ZHO/GOQDs/SiO2/Si are fabricated, measured, and compared.
Hong Wang, Xiaobing Yan, Xinlei Jia, Zichang Zhang, Chi-Hsiang Ho, Chao Lu, Yuanyuan Zhang, Tao Yang, Jianhui Zhao, Zhenyu Zhou, Mengliu Zhao, Deliang Ren   +11 more
doaj   +1 more source

Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications. [PDF]

PLoS ONE, 2017
Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films
Ting Su, Haifeng Zhang
doaj   +1 more source