Results 151 to 160 of about 51,131 (290)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Harnessing Phase Separation for the Development of High‐Performance Hydrogels

Advanced Science, EarlyView.
ABSTRACT Hydrogels are indispensable for the development of next‐generation bioelectronics, soft robotics, and biomedical devices, where their mechanical properties determine performance and reliability. Among strategies to enhance hydrogel mechanics, phase separation enables controlled heterogeneity resulting in gel networks that are reinforced by ...
Yue Shao, Yiming Ma, Baihao Shao, Molly M. Stevens   +3 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

Advanced Science, EarlyView.
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Tb3+‐Doped Glass‐Ceramic Scintillating Plates and Fibers for X‐Ray Imaging and Flexible Detection

Advanced Science, EarlyView.
A Tb3+‐doped glass‐ceramic scintillator, with controlled Ba2GdF7 nanocrystal precipitation, was developed through a rational design strategy guided by phase diagrams and molecular dynamics simulations. The obtained material exhibits a high light yield of 41 800 photons/MeV (418%/BGO), a spatial resolution of 25.3 lp/mm, and exceptional thermal ...
Songxuan Liu, Ping Zhang, Panpan Li, Yao Ji, Zhiguo Xia, Weichao Wang, Qinyuan Zhang   +6 more
wiley   +1 more source

Reply to: Bias-induced electrostatic magnetoresistance in ferromagnet/chiral systems. [PDF]

Nat Commun
Zhao Y, Zhang K, Xiao J, Sun K, Yan B.
europepmc   +1 more source

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

Advanced Science, EarlyView.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai, Siqi Wang, Peng Guo, Songling Feng, Peng Wan, Jilong Tang, Caixia Kan, Hui Li, Daning Shi, Mingming Jiang   +9 more
wiley   +1 more source

An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment. [PDF]

Micromachines (Basel)
Wang Q, Wang J, Lu M, Ma T, Li J.
europepmc   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source