Results 171 to 180 of about 51,131 (290)
Memristive Physical Reservoir Computing
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source
Electrically Active Defects and Traps and Their Relation to Stoichiometry and Chemical Environment in HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectric Stacks as Revealed by XPS. [PDF]
Spassov D +4 more
europepmc +1 more source
Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim +3 more
wiley +1 more source
Multisensory Neuromorphic Devices: From Physics to Integration. [PDF]
Gui A, Mu H, Yang R, Zhang G, Lin S.
europepmc +1 more source
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
Organic Transistor-Based Neuromorphic Electronics and Their Recent Applications. [PDF]
Wang Z, Yan F.
europepmc +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Controllable Charge Storability in InP/ZnSe Core/Shell Quantum Dots toward Bioinspired Optical Synaptic Application. [PDF]
Wen G +8 more
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source

