Organic Phototransistor Photonic Synapses for Artificial Vision. [PDF]
Ding F, Xue D, Chi L, Huang L.
europepmc +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Programming pulse width dependent charge retention characteristics of low-power synaptic thin film transistors. [PDF]
Cha D, Pi J, Lee S.
europepmc +1 more source
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun +10 more
wiley +1 more source
Hydrazine Intercalation into 2D MoTe<sub>2</sub> Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. [PDF]
Yuan L +6 more
europepmc +1 more source
Isolated nanographene crystals for nano-floating gate in charge trapping memory. [PDF]
Yang R +9 more
europepmc +1 more source
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Strategic Fermi Level Engineering of Donor-Acceptor Self-Assembled Monolayer toward Ultrahigh Paired-Pulse Facilitations in Photosynaptic Transistors. [PDF]
Wu YS +5 more
europepmc +1 more source
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
wiley +1 more source
TCAD Simulation of STI Depth and SiO<sub>2</sub>/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]
Lee W, Lee J.
europepmc +1 more source

