Results 21 to 30 of about 190,952 (277)
Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is ...
V. V. Emelyanov
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Recrystallized parylene as a mask for silicon chemical etching [PDF]
, 2008 This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours.
Kuo, Wen-Cheng +3 more
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Preparation of Nickel Nanoparticles Using Nickel Raffinate Separated by Solvent Extraction from The Spent FECL3 Etching Solution [PDF]
Archives of Metallurgy and Materials, 2019 FeCl3 bearing etching solution is mainly used for etching of metals used in shadow masks, PCBs and so on. Due course of Invar alloy etching process the FeCl3 bearing etching solution get contaminated with Ni2+ which affect adversely the etching ...
Il-Jeong Park +5 more
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International Journal of Photoenergy, 2013 Classical photoelectrodes for Dye Sensitized Solar Cells (DSSCs) were fabricated by using the electrochemical method on the titanium (Ti) template, for that the fabrication process would influence the characteristics of the DSSCs. In this study, at first
Chin-Guo Kuo +6 more
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Фізика і хімія твердого тіла, 2017 The paper presents the results of experimental determination of the influence of the initial concentration of tartaric acid on the features of the chemical interaction of InAs, InSb, GaAs and GaSb with (NH4)2Cr2O7-HBr-C4H6O6 etching solutions.
I. V. Levchenko +3 more
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AIP Advances, 2017 We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada +8 more
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, 2003 Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling ...
Al-Bayati +25 more
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Ultrasonic metal etching for metallographic analysis [PDF]
, 1971 Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures.
Young, S. G.
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NUST Journal of Engineering Sciences, 2019 PDF This paper investigates the use of chemical etching to develop repeating macro and micro geometric surface features on plain carbon steel. Important properties can be imparted in a material by the use of these surface features or textures leading ...
Isra Tariq, Fatima Maryum, Maheen Fazal, Hamza Shams, Muhammad Nauman Qureshi
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Field theory of self-organized fractal etching
, 2001 We propose a phenomenological field theoretical approach to the chemical etching of a disordered-solid. The theory is based on a recently proposed dynamical etching model.
Gabrielli, Andrea +2 more
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