Results 71 to 80 of about 190,952 (277)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices.
T. A. Ismailov   +3 more
doaj   +1 more source

Percolation-dependent Reaction Rates in the Etching of Disordered Solids

open access: yes, 2002
A prototype statistical model for the etching of a random solid is investigated in order to assess the influence of disorder and temperature on the dissolution kinetics.
Kolwankar, K. M., Plapp, M., Sapoval, B.
core   +1 more source

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon [PDF]

open access: yes, 2020
The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH₄F(aq) has been investigated during either linear-sweep voltammetry or when the ...
Lewerenz, Hans-Joachim   +4 more
core  

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

open access: yesAdvanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang   +3 more
wiley   +1 more source

Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH

open access: yesActive and Passive Electronic Components, 2000
This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated ...
C. R. Tellier   +2 more
doaj   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Pore Size Effects of Mesoporous N‐Doped Carbon Nanospheres as Advanced Support Material on the Activity of Molybdenum Sulfide Catalysts for the Hydrogen Evolution Reaction

open access: yesAdvanced Functional Materials, EarlyView.
By tuning the pore size of mesoporous N‐doped carbon (MPNC) nanospheres as support material for molybdenum sulfide, the electrochemical activity of the composite material for the hydrogen evolution reaction can be optimized. An ideal MPNC pore size of 60 nm allows a high number of molybdenum sulfide active sites while maintaining efficient proton and ...
Niklas Ortlieb   +3 more
wiley   +1 more source

InP nanocrystals on silicon for optoelectronic applications

open access: yes, 2012
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred   +10 more
core   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim   +6 more
wiley   +1 more source

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