Results 91 to 100 of about 70,763 (310)

Principles of atomic layer etching of metallic thin films

, 2022
Teplyakov, Andrew V.Modern nanoscale fabrication requires precise control over both nanoscaledimensions and material properties. Atomic layer processes, such as atomic layerdeposition (ALD) and atomic layer etching (ALE), provide a conformal ...
Konh, Mahsa
core   +1 more source

Polygonal pits on silicon surfaces that are created by laser-assisted chemical etching

AIP Advances, 2017
Laser-assisted chemical etching was conducted for creating periodic textures on silicon surfaces. Silicon plates with the (111) surface orientation were immersed in an aqueous solution of potassium hydroxide, and a pulsed laser beam (532 nm wavelength, 5
Mitsunori Saito, Saori Kimura
doaj   +1 more source

Environmental Emissions from Chemical Etching Synthesis of Silicon Nanotube for Lithium Ion Battery Applications

Journal of Manufacturing and Materials Processing, 2018
Silicon nanotubes (SiNTs) have been researched as a promising anode material to replace graphite in next-generation lithium ion batteries. Chemical etching synthesis of SiNTs is a simple, controllable and scalable process for SiNT fabrication, but the ...
Lulu Ma, Dongsheng Guan, Fenfen Wang, Chris Yuan   +3 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

Automatic speed control system for the chemical etching of thin films

Фізика і хімія твердого тіла
The possibility of creating automatic control systems based on the interferometric optical method for chemical etching processes has been shown. A structural diagram of device for automatic control of the construction of an optical path from the elements
A.V. Dalekorej, V.P. Ivanytsky, A.A. Kryuchyn, Ya.P. Legeta, V.V. Petrov, V.M. Rubish, M.M. Ryaboshchuk, I.I. Chychura   +7 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Characterization of dentine to assess bond strength of dental composites

, 2015
This study was performed to develop alternating dentine adhesion models that could help in the evaluation of a self-bonding dental composite. For this purpose dentine from human and ivory was characterized chemically and microscopically before and after ...
Bozec, L, Hesham Nuba, Saad Liaqat, Anne Young, Muhammad Khan, Paul Ashley, Aljabo, A, Nuba, HB, Laurent Bozec, Ashley, P, Young, A, Liaqat, S, Khan, MA, Anas Aljabo   +13 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Etching effects during the chemical vapor deposition of (100) diamond [PDF]

, 1999
Current theories of CVD growth on (100) diamond are unable to account for the numerous experimental observations of slow-growing, locally smooth (100)(2×1)(100)(2×1) films.
Sutton, A. P., Battaile, C. C., J. E. Butler, Pettifor, D. G., D. G. Pettifor, Battaile, Corbett C., Butler, J. E., D. J. Srolovitz, Srolovitz, D. J., Harris, S. J., C. C. Battaile, I. I. Oleinik, S. J. Harris, Srolovitz, David J., A. P. Sutton, Oleinik, I. I.   +15 more
core   +1 more source

Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

Advanced Materials Interfaces
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing ...
Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov   +13 more
doaj   +1 more source