Results 91 to 100 of about 52,531 (266)

Nano- and microscratching as a potential method for texturing the Si surface

Moldavian Journal of the Physical Sciences, 2014
The possibility of Si texturing through the use of nano- and microscratching with subsequent chemical etching has been investigated. The influence of the scratching speed, orientation of the indenter (face-on, edge-on) and normal load on the mechanism of
Prisăcaru, Andrian, Şikimaka, Olga, Harea, Evghenii, Burlacu, Alexandru, Enachi, Mihail, Branişte, Fiodor   +5 more
doaj  

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

Nanomaterials
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk   +5 more
doaj   +1 more source

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

Advanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Graphene Quantum Dot‐Induced Microstrain for Framework Stabilization of High‐Entropy Prussian Blue Analog in High‐Current Alkaline Hydrogen Evolution Reaction

Advanced Functional Materials, EarlyView.
The intrinsic distortion‐rich lattice of HEPBA with GQD‐enabled microstrain engineering establishes a mechanistic route toward high‐performance alkaline hydrogen evolution reaction. HEPBA inherently feature heterogeneous local coordination environments arising from multimetal incorporation, while properly introducing GQD during coprecipitation ...
Mia Rinawati, Yu‐Ru Liu, Wei‐Hsiang Huang, Kuan‐Yu Lin, Ching‐Ju Ho, Ling‐Yu Chang, Karel Roubik, Ni Luh Wulan Septiani, Ahmad Nuruddin, Wei‐Nien Su, Min‐Hsin Yeh   +10 more
wiley   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Application of ferrite-garnet epitaxial structures in ultra-high-frequency electronics

Технологія та конструювання в електронній апаратурі, 2005
Single-crystal iron-yttrium garnet (IYG) films with thicknesses ranging from a few micrometers to 92 μm were grown using the liquid-phase epitaxy method. Three methods of etching FeYG films were used to fabricate devices based on magnetostatic waves: ion
S. I. Yushchuk, S. A. Yuryev, P. S. Kostyuk, V. I. Bondar   +3 more
doaj  

Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques

Фізика і хімія твердого тіла
In this work, the kinetic dependences of chemical-dynamic etching of semiconductor compounds GaAs, InAs, GaSb, and InSb in polishing etching mixtures based on H2O2–HBr without and with an organic solvent are investigated.
Iryna Sheliuk, Roman Denysiuk, Galyna Malanych, Vasyl Tomashyk, Iryna Boichuk, Mykola Chayka, Oksana Melnyk   +6 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. [PDF]

Materials (Basel), 2023
Huang W, Wu J, Li W, Chen G, Chu C, Li C, Zhu Y, Yang H, Chao Y.   +8 more
europepmc   +1 more source

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Advanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi, Valerio Levati, Jordi Alcalà, Thomas Günkel, Nicolas Lejeune, Riccardo Girelli, Alejandro V. Silhanek, Valeria Russo, Narcís Mestres, Daniela Petti, Anna Palau, Edoardo Albisetti   +11 more
wiley   +1 more source